发明授权
- 专利标题： Semiconductor device manufacturing method and semiconductor device
- 专利标题（中）： 半导体器件制造方法和半导体器件
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申请号： US13398363申请日： 2012-02-16
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公开(公告)号： US08652966B2公开(公告)日： 2014-02-18
- 发明人: Akira Furuya
- 申请人： Akira Furuya
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2011-059216 20110317
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A semiconductor manufacturing method includes: forming a seed film including a first metal over a bottom surface and a side wall of an opening portion formed over interlayer insulating films and a field portion located over the interlayer insulating film except the opening portion, forming a resist over the seed film and filling the opening portion with the resist, removing part of the resist, exposing the seed film formed over the upper portion of the side walls of the opening portion and the field portion, forming a cover film including a second metal, whose resistivity is higher than that of the first metal, over the seed film located over the upper portion of the side wall of the opening portion and the field portion, exposing the seed film by removing the resist, and forming a plating film including the first metal over the exposed seed film.
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