发明授权
- 专利标题: Pseudo-inverter circuit on SeOI
- 专利标题(中): SeOI上的伪逆变电路
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申请号: US13495632申请日: 2012-06-13
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公开(公告)号: US08654602B2公开(公告)日: 2014-02-18
- 发明人: Carlos Mazure , Richard Ferrant , Bich-Yen Nguyen
- 申请人: Carlos Mazure , Richard Ferrant , Bich-Yen Nguyen
- 申请人地址: FR Bernin
- 专利权人: Soitec
- 当前专利权人: Soitec
- 当前专利权人地址: FR Bernin
- 代理机构: Winston & Strawn LLP
- 优先权: FR1052543 20100402
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
A circuit made on a semiconductor-on-insulator substrate. The circuit includes a first transistor having a first channel, a second transistor having a second channel, with the transistors provided in serial association between first and second terminals for applying a power supply potential, each of the transistors comprising a drain region and a source region in the thin layer, a channel extending between the source region and the drain region, and a front control gate located above the channel. Each transistor has a back control gate formed in the base substrate below the channel of the transistor and capable of being biased in order to modulate the threshold voltage of the transistor. At least one of the transistors is configured for operating in a depletion mode under the action of a back gate signal which will sufficiently modulate its threshold voltage.
公开/授权文献
- US20120250444A1 PSEUDO-INVERTER CIRCUIT ON SeOI 公开/授权日:2012-10-04