- 专利标题： Self aligned carbide source/drain FET
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申请号： US13566050申请日： 2012-08-03
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公开(公告)号： US08658461B2公开(公告)日： 2014-02-25
- 发明人: Cyril Cabral, Jr. , Josephine B. Chang , Alfred Grill , Michael A. Guillorn , Christian Lavoie , Eugene J. O'Sullivan
- 申请人： Cyril Cabral, Jr. , Josephine B. Chang , Alfred Grill , Michael A. Guillorn , Christian Lavoie , Eugene J. O'Sullivan
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L51/40
- IPC分类号： H01L51/40
摘要：
A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide portion, a nanostructure formed over the insulating and carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed on over at least a portion of the insulating carbon portion and at least a portion of the nanostructure.
公开/授权文献
- US20120302005A1 SELF ALIGNED CARBIDE SOURCE/DRAIN FET 公开/授权日：2012-11-29
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