公开(公告)号：US20120302005A1

公开(公告)日：2012-11-29

申请号：US13566050

申请日：2012-08-03

申请人： Cyril Cabral, JR. ,  Josephine B. Chang ,  Alfred Grill ,  Michael A. Guillorn ,  Christian Lavoie ,  Eugene J. O'Sullivan

发明人： Cyril Cabral, JR. ,  Josephine B. Chang ,  Alfred Grill ,  Michael A. Guillorn ,  Christian Lavoie ,  Eugene J. O'Sullivan

IPC分类号： H01L21/336 ,  B82Y40/00

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L29/16 ,  H01L29/1602 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/105

摘要： A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide portion, a nanostructure formed over the insulating and carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed on over at least a portion of the insulating carbon portion and at least a portion of the nanostructure.

摘要翻译： 场效应晶体管包括金属碳化物源部分，金属碳化物漏极部分，将金属碳化物源部分与金属碳化物部分分离的绝缘碳部分，形成在绝缘和碳部分上的纳米结构，并将金属碳化物源部分连接到 金属碳化物排出部分和形成在绝缘碳部分的至少一部分和至少一部分纳米结构上的栅堆叠。

公开(公告)号：US08841652B2

公开(公告)日：2014-09-23

申请号：US12627120

申请日：2009-11-30

申请人： Cyril Cabral, Jr. ,  Josephine B. Chang ,  Alfred Grill ,  Michael A. Guillorn ,  Christian Lavoie ,  Eugene J. O'Sullivan

发明人： Cyril Cabral, Jr. ,  Josephine B. Chang ,  Alfred Grill ,  Michael A. Guillorn ,  Christian Lavoie ,  Eugene J. O'Sullivan

IPC分类号： H01L29/08 ,  H01L29/16 ,  H01L29/775 ,  B82Y10/00 ,  H01L51/10 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L29/16 ,  H01L29/1602 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/105

摘要： A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide portion, a nanostructure formed over the insulating and carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed on over at least a portion of the insulating carbon portion and at least a portion of the nanostructure.

摘要翻译： 场效应晶体管包括金属碳化物源部分，金属碳化物漏极部分，将金属碳化物源部分与金属碳化物部分分离的绝缘碳部分，形成在绝缘和碳部分上的纳米结构，并将金属碳化物源部分连接到 金属碳化物排出部分和形成在绝缘碳部分的至少一部分和至少一部分纳米结构上的栅堆叠。

公开(公告)号：US20110127493A1

公开(公告)日：2011-06-02

申请号：US12627120

申请日：2009-11-30

申请人： Cyril Cabral, JR. ,  Josephine B. Chang ,  Alfred Grill ,  Michael A. Guillorn ,  Christian Lavoie ,  Eugene J. O'Sullivan

发明人： Cyril Cabral, JR. ,  Josephine B. Chang ,  Alfred Grill ,  Michael A. Guillorn ,  Christian Lavoie ,  Eugene J. O'Sullivan

IPC分类号： H01L29/66 ,  H01L21/336

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L29/16 ,  H01L29/1602 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/105

摘要： A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide portion, a nanostructure formed over the insulating and carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed on over at least a portion of the insulating carbon portion and at least a portion of the nanostructure.

摘要翻译： 场效应晶体管包括金属碳化物源部分，金属碳化物漏极部分，将金属碳化物源部分与金属碳化物部分分离的绝缘碳部分，形成在绝缘和碳部分上的纳米结构，并将金属碳化物源部分连接到 金属碳化物排出部分和形成在绝缘碳部分的至少一部分和至少一部分纳米结构上的栅堆叠。

公开(公告)号：US08658461B2

公开(公告)日：2014-02-25

申请号：US13566050

申请日：2012-08-03

申请人： Cyril Cabral, Jr. ,  Josephine B. Chang ,  Alfred Grill ,  Michael A. Guillorn ,  Christian Lavoie ,  Eugene J. O'Sullivan

发明人： Cyril Cabral, Jr. ,  Josephine B. Chang ,  Alfred Grill ,  Michael A. Guillorn ,  Christian Lavoie ,  Eugene J. O'Sullivan

IPC分类号： H01L51/40

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L29/16 ,  H01L29/1602 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/105

摘要： A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide portion, a nanostructure formed over the insulating and carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed on over at least a portion of the insulating carbon portion and at least a portion of the nanostructure.

公开(公告)号：US06773982B2

公开(公告)日：2004-08-10

申请号：US09927694

申请日：2001-08-10

申请人： Charles Thomas Black ,  Cyril Cabral, Jr. ,  Alfred Grill ,  Deborah Ann Neumayer ,  Wilbur David Pricer ,  Katherine Lynn Saenger ,  Thomas McCarroll Shaw

发明人： Charles Thomas Black ,  Cyril Cabral, Jr. ,  Alfred Grill ,  Deborah Ann Neumayer ,  Wilbur David Pricer ,  Katherine Lynn Saenger ,  Thomas McCarroll Shaw

IPC分类号： H01L218242

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： An integrated ferroelectric/CMOS structure which comprises at least a ferroelectric material, a pair of electrodes in contact with opposite surfaces of the ferroelectric material, where the electrodes do not decompose at deposition or annealing, and an oxygen source layer in contact with at least one of said electrodes, said oxygen source layer being a metal oxide which at least partially decomposes during deposition and/or subsequent processing is provided as well as a method of fabricating the same.

摘要翻译： 一种集成铁电/ CMOS结构，其至少包括铁电材料，与所述铁电材料的相对表面接触的一对电极，其中所述电极在沉积或退火时不分解，以及氧源层与至少一个 的所述电极，所述氧源层是在沉积期间和/或后续处理中至少部分分解的金属氧化物以及其制造方法。

公开(公告)号：US5796166A

公开(公告)日：1998-08-18

申请号：US668241

申请日：1996-06-21

申请人： Paul David Agnello ,  Cyril Cabral, Jr. ,  Alfred Grill ,  Christopher Vincent Jahnes ,  Thomas John Licata ,  Ronnen Andrew Roy

发明人： Paul David Agnello ,  Cyril Cabral, Jr. ,  Alfred Grill ,  Christopher Vincent Jahnes ,  Thomas John Licata ,  Ronnen Andrew Roy

IPC分类号： H01L21/28 ,  H01L21/46 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/092 ,  H01L27/105 ,  H01L27/108 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28061 ,  H01L21/28202 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4941 ,  H01L29/4958 ,  H01L29/513 ,  H01L29/518 ,  H01L29/94

摘要： A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.

公开(公告)号：US06388285B1

公开(公告)日：2002-05-14

申请号：US09325857

申请日：1999-06-04

申请人： Charles Thomas Black ,  Cyril Cabral, Jr. ,  Alfred Grill ,  Deborah Ann Neumayer ,  Wilbur David Pricer ,  Katherine Lynn Saenger ,  Thomas McCarroll Shaw

发明人： Charles Thomas Black ,  Cyril Cabral, Jr. ,  Alfred Grill ,  Deborah Ann Neumayer ,  Wilbur David Pricer ,  Katherine Lynn Saenger ,  Thomas McCarroll Shaw

IPC分类号： H01L29788

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： An integrated ferroelectric/CMOS structure which comprises at least a ferroelectric material, a pair of electrodes in contact with opposite surfaces of the ferroelectric material, where the electrodes do not decompose at deposition or annealing, and an oxygen source layer in contact with at least one of said electrodes, said oxygen source layer being a metal oxide which at least partially decomposes during deposition and/or subsequent processing is provided as well as a method of fabricating the same.

摘要翻译： 一种集成铁电/ CMOS结构，其至少包括铁电材料，与所述铁电材料的相对表面接触的一对电极，其中所述电极在沉积或退火时不分解，以及氧源层与至少一个 的所述电极，所述氧源层是在沉积期间和/或后续处理中至少部分分解的金属氧化物以及其制造方法。

公开(公告)号：US5625233A

公开(公告)日：1997-04-29

申请号：US372633

申请日：1995-01-13

申请人： Cyril Cabral, Jr. ,  Evan G. Colgan ,  Alfred Grill

发明人： Cyril Cabral, Jr. ,  Evan G. Colgan ,  Alfred Grill

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/027 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L23/52 ,  H01L23/532 ,  H01L27/108 ,  H01L23/482 ,  H01L29/45

CPC分类号： H01L21/76858 ,  H01L21/76841 ,  H01L23/53223 ,  H01L28/60 ,  H01L28/75 ,  H01L28/55 ,  H01L2924/0002

摘要： The use of a bi-layer thin film structure consisting of aluminum or aluminide on a refractory metal layer as a diffusion barrier to oxygen penetration at high temperatures for preventing the electrical and mechanical degradation of the refractory metal for use in applications such as a capacitor electrode for high dielectric constant materials.

摘要翻译： 在难熔金属层上使用由铝或铝化物组成的双层薄膜结构作为高温氧渗透的扩散阻挡层，用于防止难熔金属在诸如电容器电极之类的应用中的电和机械降解 用于高介电常数材料。

公开(公告)号：US5639316A

公开(公告)日：1997-06-17

申请号：US465054

申请日：1995-06-06

申请人： Cyril Cabral, Jr. ,  Evan George Colgan ,  Alfred Grill

发明人： Cyril Cabral, Jr. ,  Evan George Colgan ,  Alfred Grill

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/027 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L23/52 ,  H01L23/532 ,  H01L27/108 ,  C23C8/80 ,  C23C8/10 ,  C25D5/10 ,  C25D7/12

CPC分类号： H01L21/76858 ,  H01L21/76841 ,  H01L23/53223 ,  H01L28/60 ,  H01L28/75 ,  H01L28/55 ,  H01L2924/0002

摘要： The use of a bi-layer thin film structure consisting of aluminum or aluminide on a refractory metal layer as a diffusion barrier to oxygen penetration at high temperatures for preventing the electrical and mechanical degradation of the refractory metal for use in applications such as a capacitor electrode for high dielectric constant materials.

摘要翻译： 在难熔金属层上使用由铝或铝化物组成的双层薄膜结构作为高温氧渗透的扩散阻挡层，用于防止难熔金属在诸如电容器电极之类的应用中的电和机械降解 用于高介电常数材料。

公开(公告)号：US5576579A

公开(公告)日：1996-11-19

申请号：US371627

申请日：1995-01-12

申请人： Paul D. Agnello ,  Cyril Cabral, Jr. ,  Alfred Grill ,  Christopher V. Jahnes ,  Thomas J. Licata ,  Ronnen A. Roy

发明人： Paul D. Agnello ,  Cyril Cabral, Jr. ,  Alfred Grill ,  Christopher V. Jahnes ,  Thomas J. Licata ,  Ronnen A. Roy

IPC分类号： H01L21/28 ,  H01L21/46 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/092 ,  H01L27/105 ,  H01L27/108 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/94 ,  H01L29/43

CPC分类号： H01L21/28185 ,  H01L21/28061 ,  H01L21/28202 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4941 ,  H01L29/4958 ,  H01L29/513 ,  H01L29/518 ,  H01L29/94

摘要： A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.

摘要翻译： 具有氧化或掺杂剂扩散阻挡层的多层结构，其由耐氧化的难熔金属 - 硅 - 氮的导电的，热稳定的材料制成，防止掺杂剂从硅的扩散扩散，并且具有宽的工艺窗口，其中难熔金属 选自Ta，W，Nb，V，Ti，Zr，Hf，Cr和Mo。