Invention Grant
- Patent Title: Strained transistor structure
- Patent Title (中): 应变晶体管结构
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Application No.: US13341592Application Date: 2011-12-30
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Publication No.: US08659059B2Publication Date: 2014-02-25
- Inventor: Barry Dove
- Applicant: Barry Dove
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A strain enhanced transistor is provided having a strain inducing layer overlying a gate electrode. The gate electrode has sloped sidewalls over the channel region of the transistor.
Public/Granted literature
- US20130168743A1 STRAINED TRANSISTOR STRUCTURE Public/Granted day:2013-07-04
Information query
IPC分类:
