发明授权
- 专利标题: Asymmetric multilevel outphasing architecture for RF amplifiers
- 专利标题(中): 射频放大器的非对称多电平外相结构
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申请号: US13423909申请日: 2012-03-19
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公开(公告)号: US08659353B2公开(公告)日: 2014-02-25
- 发明人: Joel L. Dawson , David J. Perreault , SungWon Chung , Philip Godoy , Everest Huang
- 申请人: Joel L. Dawson , David J. Perreault , SungWon Chung , Philip Godoy , Everest Huang
- 申请人地址: US MA Cambridge
- 专利权人: Massachusetts Institute of Technology
- 当前专利权人: Massachusetts Institute of Technology
- 当前专利权人地址: US MA Cambridge
- 代理机构: Daly, Crowley, Mofford & Durkee, LLP
- 主分类号: H03F3/68
- IPC分类号: H03F3/68
摘要:
A radio frequency (RF) circuit includes a power supply configured to generate a plurality of voltages, a plurality of power amplifiers, each having an RF output port and a power supply input port, a switch network having a plurality of input ports coupled to the power supply and a plurality of switch network output ports coupled to the power supply input ports of the plurality of power amplifiers, wherein the switch network is configured to output selected ones of the plurality of voltages from the plurality of switch network output ports, at least two of the switch network output port voltages capable of being different ones of the plurality of voltages, and an RF power combiner circuit having a plurality of input ports coupled to RF output ports of the plurality of power amplifiers and an output port at which is provided an output signal of the RF circuit.
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