A non-volatile memory device performs a read operation for compensating for coupling due to an adjacent memory cell. With the read operation of the non-volatile memory device, the coupling effect included in a read result of the selected memory cell is compensated on the basis of a program state of an adjacent memory cell adjacent to the selected memory cell. Toward this end, a read operation for the adjacent memory cell is selectively performed before the selected memory cell is read. Upon sensing of data from the selected memory cell, one or more read operations for the selected memory cell are performed according to the program state of the adjacent memory cell with a read voltage being changed in level depending on the program state of the adjacent memory cell.