发明授权
- 专利标题: Gas delivery apparatus and method for atomic layer deposition
- 专利标题(中): 用于原子层沉积的气体输送装置和方法
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申请号: US12797999申请日: 2010-06-10
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公开(公告)号: US08668776B2公开(公告)日: 2014-03-11
- 发明人: Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
- 申请人: Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson & Sheridan, LLP
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; H01L21/306
摘要:
Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
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