Invention Grant
- Patent Title: Method of tailoring conformality of Si-containing film
- Patent Title (中): 定制含Si膜的一致性的方法
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Application No.: US12847848Application Date: 2010-07-30
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Publication No.: US08669185B2Publication Date: 2014-03-11
- Inventor: Shigeyuki Onizawa , Woo-Jin Lee , Hideaki Fukuda , Kunitoshi Namba
- Applicant: Shigeyuki Onizawa , Woo-Jin Lee , Hideaki Fukuda , Kunitoshi Namba
- Applicant Address: JP Tokyo
- Assignee: ASM Japan K.K.
- Current Assignee: ASM Japan K.K.
- Current Assignee Address: JP Tokyo
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/302 ; H01L21/31 ; C23C16/00

Abstract:
A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness.
Public/Granted literature
- US20120028469A1 METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM Public/Granted day:2012-02-02
Information query
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