发明授权
- 专利标题: Thin absorber layer of a photovoltaic device
- 专利标题(中): 光电器件的薄吸收层
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申请号: US12940918申请日: 2010-11-05
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公开(公告)号: US08669467B2公开(公告)日: 2014-03-11
- 发明人: Isik C. Kizilyalli , Melissa J. Archer , Harry Atwater , Thomas J. Gmitter , Gang He , Andreas G. Hegedus , Gregg Higashi
- 申请人: Isik C. Kizilyalli , Melissa J. Archer , Harry Atwater , Thomas J. Gmitter , Gang He , Andreas G. Hegedus , Gregg Higashi
- 申请人地址: US CA Sunnyvale
- 专利权人: Alta Devices, Inc.
- 当前专利权人: Alta Devices, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Sawyer Law Group, P.C.
- 主分类号: H01L31/00
- IPC分类号: H01L31/00
摘要:
Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
公开/授权文献
- US20110041904A1 THIN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE 公开/授权日:2011-02-24
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