公开(公告)号：US09691921B2

公开(公告)日：2017-06-27

申请号：US12904047

申请日：2010-10-13

Applicant: Harry Atwater ,  Brendan Kayes ,  Isik C. Kizilyalli ,  Hui Nie

Inventor： Harry Atwater ,  Brendan Kayes ,  Isik C. Kizilyalli ,  Hui Nie

IPC: H01L31/00 ,  H01L21/00 ,  H01L31/0232 ,  H01L31/056 ,  H01L31/0304 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0693

CPC classification number: H01L31/02327 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/056 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/208 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

Abstract: Embodiments of the invention generally relate to device fabrication of thin films used as solar devices or other electronic devices, and include textured back reflectors utilized in solar applications. In one embodiment, a method for forming a textured metallic back reflector which includes depositing a metallic layer on a gallium arsenide material within a thin film stack, forming an array of metallic islands from the metallic layer during an annealing process, removing or etching material from the gallium arsenide material to form apertures between the metallic islands, and depositing a metallic reflector layer to fill the apertures and cover the metallic islands. In another embodiment, a textured metallic back reflector includes an array of metallic islands disposed on a gallium arsenide material, a plurality of apertures disposed between the metallic islands and extending into the gallium arsenide material, a metallic reflector layer disposed over the metallic islands, and a plurality of reflector protrusions formed between the metallic islands and extending from the metallic reflector layer and into the apertures formed in the gallium arsenide material.

公开(公告)号：US20130155484A1

公开(公告)日：2013-06-20

申请号：US13327298

申请日：2011-12-15

Applicant: LUKE SWEATLOCK ,  Kenneth Diest ,  James Ma ,  Vladan Jankovic ,  Imogen Pryce ,  Ryan Briggs ,  Harry Atwater

Inventor： LUKE SWEATLOCK ,  Kenneth Diest ,  James Ma ,  Vladan Jankovic ,  Imogen Pryce ,  Ryan Briggs ,  Harry Atwater

IPC: G02F1/09 ,  C23F1/00

CPC classification number: B82Y20/00 ,  G02F1/0147 ,  G02F1/065 ,  G02F1/23 ,  G02F2203/10

Abstract: Systems and methods are provided for modulating light of a wavelength of interest. The modulator assembly includes a plasmonic layer that supports surface plasmon polaritons at the wavelength of interest and a layer of solid-state phase change material having a first phase in which it is substantially transparent to light of the wavelength of interest and a second phase in which it is substantially opaque to light of the wavelength of interest. A control mechanism is configured to alter the phase of the solid-state phase change material between the first phase and the second phase. Each of the plasmonic layer and the layer of solid-state phase change material are configured as to provide a plasmonic mode of transmission for light of the wavelength of interest.

Abstract translation: 提供了用于调制感兴趣波长的光的系统和方法。 调制器组件包括等离子体激元层，其支持感兴趣波长的表面等离子体激元和具有第一相的固态相变材料层，其中其对于感兴趣的波长的光基本上是透明的，其中第二相 对感兴趣的波长的光基本上是不透明的。 控制机构被配置为改变第一相和第二相之间的固态相变材料的相位。 等离子体激元层和固态相变材料层中的每一个被配置为为感兴趣的波长的光提供等离子体激发传输模式。

公开(公告)号：US20130098289A1

公开(公告)日：2013-04-25

申请号：US13444645

申请日：2012-04-11

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

IPC: C30B25/12 ,  C30B25/10 ,  C30B25/18 ,  C30B25/14 ,  C30B25/08 ,  C30B25/02

CPC classification number: C30B25/08 ,  B65G2207/06 ,  C23C16/45519 ,  C23C16/4583 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67109 ,  H01L21/67784

Abstract: Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step.

公开(公告)号：US20100126570A1

公开(公告)日：2010-05-27

申请号：US12605129

申请日：2009-10-23

Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC: H01L31/0304 ,  H01L31/18

CPC classification number: H01L31/0735 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract translation: 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 在光伏（PV）器件的一个实施例中，PV器件通常包括与n掺杂层相邻的n掺杂层和p +掺杂层以形成pn层，使得当电磁辐射被吸收时产生电能 由pn层。 n掺杂层和p +掺杂层可以组成厚度小于500nm的吸收层。 与常规太阳能电池相比，这种薄的吸收层可以在PV器件中实现更高的效率和灵活性。

公开(公告)号：US20060208341A1

公开(公告)日：2006-09-21

申请号：US11430160

申请日：2006-05-09

Applicant: Harry Atwater ,  James Zahler

Inventor： Harry Atwater ,  James Zahler

IPC: H01L31/117

CPC classification number: H01L21/76254 ,  H01L21/187 ,  H01L31/0304 ,  H01L31/0392 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/1852 ,  Y02E10/544 ,  Y10S438/933

Abstract: Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

Abstract translation: Ge / Si和其他非硅膜异质结构是通过晶片接合到诸如Si的廉价衬底的Ge膜的氢诱导剥离形成的。 将Ge的薄的单晶层转移到Si衬底。 在Ge / Si异质结构的界面处的键是共价的，以确保良好的热接触，机械强度，并且能够在Si衬底和Ge层之间形成欧姆接触。 为了实现这种类型的键合，使用疏水性晶片结合，因为如本发明所示的那样，促进范德华键的氢表面终止物质在高于600℃的温度下进入共价键，在疏水结合的Ge / Si层中转移 系统。

公开(公告)号：US20060030131A1

公开(公告)日：2006-02-09

申请号：US10974390

申请日：2004-10-26

Applicant: Christine Richardson ,  Harry Atwater

Inventor： Christine Richardson ,  Harry Atwater

IPC: H01L21/20

CPC classification number: C30B1/023 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672

Abstract: The present invention provides methods of manufacturing of silicon in substantially crystalline form out of amorphous silicon.

公开(公告)号：US20050026432A1

公开(公告)日：2005-02-03

申请号：US10784586

申请日：2004-02-23

Applicant: Harry Atwater ,  James Zahler ,  Anna Morral

Inventor： Harry Atwater ,  James Zahler ,  Anna Morral

IPC: H01L21/302 ,  H01L21/461 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L21/187 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/30625 ,  H01L21/76254 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/005 ,  Y02E10/50

Abstract: A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

公开(公告)号：US09029680B2

公开(公告)日：2015-05-12

申请号：US12605163

申请日：2009-10-23

Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC: H01L31/042 ,  H01L31/05 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0304

CPC classification number: H01L31/0516 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/0512 ,  H01L31/0735 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit may have all electrical contacts positioned on the back side of the PV device to avoid shadowing and increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer formed at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract translation: 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 光伏（PV）单元可以具有位于PV装置的背面上的所有电触点，以避免遮蔽并增加入射到PV单元前侧的光子的吸收。 可以将多个PV单元组合到PV组中，并且可以连接一组PV组，以形成具有在低温下形成的薄金属或导电聚合物的PV模块。 与常规太阳能电池相比，这样的创新可以允许PV装置的更高的效率和灵活性。

公开(公告)号：US08749866B2

公开(公告)日：2014-06-10

申请号：US13327298

申请日：2011-12-15

Applicant: Luke Sweatlock ,  Kenneth Diest ,  James Ma ,  Vladan Jankovic ,  Imogen Pryce ,  Ryan Briggs ,  Harry Atwater

Inventor： Luke Sweatlock ,  Kenneth Diest ,  James Ma ,  Vladan Jankovic ,  Imogen Pryce ,  Ryan Briggs ,  Harry Atwater

IPC: G02F1/065 ,  B82Y20/00

CPC classification number: B82Y20/00 ,  G02F1/0147 ,  G02F1/065 ,  G02F1/23 ,  G02F2203/10

Abstract: Systems and methods are provided for modulating light of a wavelength of interest. The modulator assembly includes a plasmonic layer that supports surface plasmon polaritons at the wavelength of interest and a layer of solid-state phase change material having a first phase in which it is substantially transparent to light of the wavelength of interest and a second phase in which it is substantially opaque to light of the wavelength of interest. A control mechanism is configured to alter the phase of the solid-state phase change material between the first phase and the second phase. Each of the plasmonic layer and the layer of solid-state phase change material are configured as to provide a plasmonic mode of transmission for light of the wavelength of interest.

Abstract translation: 提供了用于调制感兴趣波长的光的系统和方法。 调制器组件包括等离子体激元层，其支持感兴趣波长的表面等离子体激元和具有第一相的固态相变材料层，其中其对于感兴趣的波长的光基本上是透明的，其中第二相 对感兴趣的波长的光基本上是不透明的。 控制机构被配置为改变第一相和第二相之间的固态相变材料的相位。 等离子体激元层和固态相变材料层中的每一个被配置为为感兴趣的波长的光提供等离子体激发传输模式。

公开(公告)号：US08674214B2

公开(公告)日：2014-03-18

申请号：US12605129

申请日：2009-10-23

Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC: H01L31/00

CPC classification number: H01L31/0735 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.