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    PLASMONIC MODULATOR INCORPORATING A SOLID-STATE PHASE CHANGE MATERIAL
    2.
    发明申请
    PLASMONIC MODULATOR INCORPORATING A SOLID-STATE PHASE CHANGE MATERIAL 有权
    包含固态相变材料的等离子体调制器

    公开(公告)号：US20130155484A1

    公开(公告)日：2013-06-20

    申请号：US13327298

    申请日：2011-12-15

    申请人： LUKE SWEATLOCK ,  Kenneth Diest ,  James Ma ,  Vladan Jankovic ,  Imogen Pryce ,  Ryan Briggs ,  Harry Atwater

    发明人： LUKE SWEATLOCK ,  Kenneth Diest ,  James Ma ,  Vladan Jankovic ,  Imogen Pryce ,  Ryan Briggs ,  Harry Atwater

    IPC分类号： G02F1/09 ,  C23F1/00

    CPC分类号： B82Y20/00 ,  G02F1/0147 ,  G02F1/065 ,  G02F1/23 ,  G02F2203/10

    摘要： Systems and methods are provided for modulating light of a wavelength of interest. The modulator assembly includes a plasmonic layer that supports surface plasmon polaritons at the wavelength of interest and a layer of solid-state phase change material having a first phase in which it is substantially transparent to light of the wavelength of interest and a second phase in which it is substantially opaque to light of the wavelength of interest. A control mechanism is configured to alter the phase of the solid-state phase change material between the first phase and the second phase. Each of the plasmonic layer and the layer of solid-state phase change material are configured as to provide a plasmonic mode of transmission for light of the wavelength of interest.

    摘要翻译： 提供了用于调制感兴趣波长的光的系统和方法。 调制器组件包括等离子体激元层，其支持感兴趣波长的表面等离子体激元和具有第一相的固态相变材料层，其中其对于感兴趣的波长的光基本上是透明的，其中第二相 对感兴趣的波长的光基本上是不透明的。 控制机构被配置为改变第一相和第二相之间的固态相变材料的相位。 等离子体激元层和固态相变材料层中的每一个被配置为为感兴趣的波长的光提供等离子体激发传输模式。

    THIN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE
    4.
    发明申请
    THIN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE 有权
    一个光伏器件的薄膜层

    公开(公告)号：US20100126570A1

    公开(公告)日：2010-05-27

    申请号：US12605129

    申请日：2009-10-23

    申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

    发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

    IPC分类号： H01L31/0304 ,  H01L31/18

    CPC分类号： H01L31/0735 ,  Y02E10/544

    摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

    摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 在光伏（PV）器件的一个实施例中，PV器件通常包括与n掺杂层相邻的n掺杂层和p +掺杂层以形成pn层，使得当电磁辐射被吸收时产生电能 由pn层。 n掺杂层和p +掺杂层可以组成厚度小于500nm的吸收层。 与常规太阳能电池相比，这种薄的吸收层可以在PV器件中实现更高的效率和灵活性。

    Bonded substrate and method of making same
    5.
    发明申请
    Bonded substrate and method of making same 有权
    粘结基材及其制备方法

    公开(公告)号：US20060208341A1

    公开(公告)日：2006-09-21

    申请号：US11430160

    申请日：2006-05-09

    申请人： Harry Atwater ,  James Zahler

    发明人： Harry Atwater ,  James Zahler

    IPC分类号： H01L31/117

    CPC分类号： H01L21/76254 ,  H01L21/187 ,  H01L31/0304 ,  H01L31/0392 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/1852 ,  Y02E10/544 ,  Y10S438/933

    摘要： Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

    摘要翻译： Ge / Si和其他非硅膜异质结构是通过晶片接合到诸如Si的廉价衬底的Ge膜的氢诱导剥离形成的。 将Ge的薄的单晶层转移到Si衬底。 在Ge / Si异质结构的界面处的键是共价的，以确保良好的热接触，机械强度，并且能够在Si衬底和Ge层之间形成欧姆接触。 为了实现这种类型的键合，使用疏水性晶片结合，因为如本发明所示的那样，促进范德华键的氢表面终止物质在高于600℃的温度下进入共价键，在疏水结合的Ge / Si层中转移 系统。

    Plasmonic modulator incorporating a solid-state phase change material
    9.
    发明授权
    Plasmonic modulator incorporating a solid-state phase change material 有权
    掺入固态相变材料的等离子体调制器

    公开(公告)号：US08749866B2

    公开(公告)日：2014-06-10

    申请号：US13327298

    申请日：2011-12-15

    申请人： Luke Sweatlock ,  Kenneth Diest ,  James Ma ,  Vladan Jankovic ,  Imogen Pryce ,  Ryan Briggs ,  Harry Atwater

    发明人： Luke Sweatlock ,  Kenneth Diest ,  James Ma ,  Vladan Jankovic ,  Imogen Pryce ,  Ryan Briggs ,  Harry Atwater

    IPC分类号： G02F1/065 ,  B82Y20/00

    CPC分类号： B82Y20/00 ,  G02F1/0147 ,  G02F1/065 ,  G02F1/23 ,  G02F2203/10

    摘要： Systems and methods are provided for modulating light of a wavelength of interest. The modulator assembly includes a plasmonic layer that supports surface plasmon polaritons at the wavelength of interest and a layer of solid-state phase change material having a first phase in which it is substantially transparent to light of the wavelength of interest and a second phase in which it is substantially opaque to light of the wavelength of interest. A control mechanism is configured to alter the phase of the solid-state phase change material between the first phase and the second phase. Each of the plasmonic layer and the layer of solid-state phase change material are configured as to provide a plasmonic mode of transmission for light of the wavelength of interest.

    摘要翻译： 提供了用于调制感兴趣波长的光的系统和方法。 调制器组件包括等离子体激元层，其支持感兴趣波长的表面等离子体激元和具有第一相的固态相变材料层，其中其对于感兴趣的波长的光基本上是透明的，其中第二相 对感兴趣的波长的光基本上是不透明的。 控制机构被配置为改变第一相和第二相之间的固态相变材料的相位。 等离子体激元层和固态相变材料层中的每一个被配置为为感兴趣的波长的光提供等离子体激发传输模式。