发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13307398申请日: 2011-11-30
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公开(公告)号: US08669556B2公开(公告)日: 2014-03-11
- 发明人: Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
- 申请人: Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2010-270557 20101203
- 主分类号: H01L29/04
- IPC分类号: H01L29/04
摘要:
An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
公开/授权文献
- US20120138922A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 公开/授权日:2012-06-07