公开(公告)号：US08669556B2

公开(公告)日：2014-03-11

申请号：US13307398

申请日：2011-11-30

申请人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

发明人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

摘要翻译： 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US08329506B2

公开(公告)日：2012-12-11

申请号：US12618944

申请日：2009-11-16

申请人： Kengo Akimoto ,  Junichiro Sakata ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga

发明人： Kengo Akimoto ,  Junichiro Sakata ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

摘要： It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

摘要翻译： 本发明的目的是提供一种适用于半导体器件的氧化物半导体。 或者，另一目的是提供一种使用氧化物半导体的半导体器件。 提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。 在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

公开(公告)号：US08766250B2

公开(公告)日：2014-07-01

申请号：US12950186

申请日：2010-11-19

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/10 ,  H01L29/41733

摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

摘要翻译： 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

公开(公告)号：US08319218B2

公开(公告)日：2012-11-27

申请号：US12897160

申请日：2010-10-04

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

摘要翻译： 目的在于提供一种具有新的结构的氧化物半导体层，其优选用于半导体器件。 或者，另一个目的是提供一种使用具有新颖结构的氧化物半导体层的半导体器件。 氧化物半导体层包括主要为非晶质的非晶区域和在表面附近含有In2Ga2ZnO7晶体的晶体区域，其中晶粒取向为使得c轴相对于表面几乎垂直。 或者，半导体器件使用这种氧化物半导体层。

公开(公告)号：US20110084267A1

公开(公告)日：2011-04-14

申请号：US12898357

申请日：2010-10-05

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC分类号： H01L29/12 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

摘要翻译： 通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。 此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以 防止 因此，可以制造高度可靠的半导体器件。 具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

公开(公告)号：US09911856B2

公开(公告)日：2018-03-06

申请号：US12900145

申请日：2010-10-07

申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

IPC分类号： H01L29/786 ,  H01L29/423

CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/78696

摘要： One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.

公开(公告)号：US09627198B2

公开(公告)日：2017-04-18

申请号：US12894791

申请日：2010-09-30

申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/02 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L21/02554 ,  G02F1/1368 ,  G02F1/167 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02266 ,  H01L21/02422 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.

公开(公告)号：US20110084272A1

公开(公告)日：2011-04-14

申请号：US12900136

申请日：2010-10-07

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/22 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618

摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

摘要翻译： 目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。 薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或 包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极 。 金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。

公开(公告)号：US08816349B2

公开(公告)日：2014-08-26

申请号：US12898357

申请日：2010-10-05

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC分类号： H01L27/14

CPC分类号： H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

摘要翻译： 通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。 此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以 防止 因此，可以制造高度可靠的半导体器件。 具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

公开(公告)号：US08779418B2

公开(公告)日：2014-07-15

申请号：US12900136

申请日：2010-10-07

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618

摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

摘要翻译： 目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。 薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或 包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极 。 金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。