发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US13207761申请日: 2011-08-11
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公开(公告)号: US08669576B2公开(公告)日: 2014-03-11
- 发明人: Tsuyoshi Takahashi
- 申请人: Tsuyoshi Takahashi
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Kratz, Quintos & Hanson, LLP
- 优先权: JP2010-183616 20100819
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer formed in contact with the first semiconductor layer, and a third semiconductor layer of a second conductivity type formed in contact with the second semiconductor layer, the first semiconductor layer provided with a first semiconductor region at a given distance from an interface between the first semiconductor layer and the second semiconductor layer, and an impurity concentration of the first semiconductor region higher than an impurity concentration of the first semiconductor layer except where the first semiconductor region is formed.