发明授权
- 专利标题: High power amplifier
- 专利标题(中): 大功率放大器
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申请号: US13016599申请日: 2011-01-28
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公开(公告)号: US08669812B2公开(公告)日: 2014-03-11
- 发明人: Robert Actis , Robert J. Lender, Jr. , Steve M. Rajkowski , Kanin Chu , Blair E. Coburn
- 申请人: Robert Actis , Robert J. Lender, Jr. , Steve M. Rajkowski , Kanin Chu , Blair E. Coburn
- 申请人地址: US DE Wilmington
- 专利权人: Schilmass Co., L.L.C.
- 当前专利权人: Schilmass Co., L.L.C.
- 当前专利权人地址: US DE Wilmington
- 代理机构: McAndrews, Held & Malloy, Ltd.
- 主分类号: H03F3/60
- IPC分类号: H03F3/60
摘要:
A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.
公开/授权文献
- US20120268213A1 HIGH POWER AMPLIFIER 公开/授权日:2012-10-25
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