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公开(公告)号：US08576009B2
公开(公告)日：2013-11-05
申请号：US13316900
申请日：2011-12-12
IPC分类号： H03F3/60
CPC分类号： H03F3/607 , H03F2200/36
摘要： A broadband high power amplifier architecture is disclosed. One example configuration includes a first plurality of distributed amplification cells connected in a first string, wherein a conductive trace operatively coupling outputs of the first string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the first string. The amplifier further includes a second plurality of distributed amplification cells connected in a second string, wherein a conductive trace operatively coupling outputs of the second string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the second string. A combiner combines output signals of the first and second strings. Additional strings and/or stages can be provided, and the degree of combining will depend, for example, on factors such as the application and desired output power.
摘要翻译： 公开了宽带高功率放大器架构。 一个示例配置包括以第一串连接的第一多个分布式放大单元，其中可操作地耦合第一串单元的输出的导电迹线是阶梯结构，使得相关联的电感从第一单元到第一单元 第一个字符串 放大器还包括以第二串连接的第二多个分布式放大单元，其中可操作地耦合第二串单元的输出的导电迹线是阶梯式结构，使得相关联的电感从第一单元到第一单元 第二个字符串。 组合器组合第一和第二串的输出信号。 可以提供额外的串和/或级，并且组合的程度将取决于例如应用和期望的输出功率等因素。
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公开(公告)号：US08076975B1
公开(公告)日：2011-12-13
申请号：US13081279
申请日：2011-04-06
IPC分类号： H03F3/60
CPC分类号： H03F3/607 , H03F2200/36
摘要： A broadband high power amplifier architecture is disclosed. One example configuration includes a first plurality of distributed amplification cells connected in a first string, wherein a conductive trace operatively coupling outputs of the first string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the first string. The amplifier further includes a second plurality of distributed amplification cells connected in a second string, wherein a conductive trace operatively coupling outputs of the second string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the second string. A combiner combines output signals of the first and second strings. Additional strings and/or stages can be provided, and the degree of combining will depend, for example, on factors such as the application and desired output power.
摘要翻译： 公开了宽带高功率放大器架构。 一个示例配置包括以第一串连接的第一多个分布式放大单元，其中可操作地耦合第一串单元的输出的导电迹线是阶梯结构，使得相关联的电感从第一单元到第一单元 第一个字符串 放大器还包括以第二串连接的第二多个分布式放大单元，其中可操作地耦合第二串单元的输出的导电迹线是阶梯式结构，使得相关联的电感从第一单元到第一单元 第二个字符串。 组合器组合第一和第二串的输出信号。 可以提供额外的串和/或级，并且组合的程度将取决于例如应用和期望的输出功率等因素。
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3.发明申请Solid-state ultra-wideband microwave power amplifier employing modular non-uniform distributed amplifier elements 有权采用模块化非均匀分布式放大器元件的固态超宽带微波功率放大器公开(公告)号：US20090309659A1
公开(公告)日：2009-12-17
申请号：US11629025
申请日：2005-11-01
CPC分类号： H03F3/211 , H03F1/42 , H03F3/195 , H03F3/604 , H03F3/607 , H03F2200/39 , H03F2200/453 , H03F2200/543 , H03F2203/21106 , H03F2203/21142 , H03F2203/21178
摘要： A number of identical non-uniformly distributed ultra-wideband power amplifier string building blocks are coupled together to form an ultra-wide bandwidth high-power amplifier. The non-uniform distribution results in an amplifier utilizing modular string building blocks that have input and output impedances with only real values. This permits the strings to be replicated and connected together with simple impedance matching. The internal impedance matching associated with the non-linear distribution also absorbs parasitic capacitance to permit the ultra-broadband operation. In one embodiment identical transistors are used for each cell so that the strings may be identically replicated. This permits modular re-use without reconfiguration. In one embodiment a non-uniform distributed power amplifier built using the subject building blocks provides an ultra-wideband multi-octave device suitable for electronic warfare and communications applications, especially to replace traveling wave tubes.
摘要翻译： 许多相同的非均匀分布的超宽带功率放大器串构造块被耦合在一起以形成超宽带宽大功率放大器。 不均匀分布导致使用具有仅具有实际值的输入和输出阻抗的模块化串构造块的放大器。 这允许串被复制和连接在一起与简单的阻抗匹配。 与非线性分布相关的内部阻抗匹配也吸收寄生电容以允许超宽带操作。 在一个实施例中，相同的晶体管用于每个单元，使得串可以被相同复制。 这允许模块化重新使用而不重新配置。 在一个实施例中，使用对象构建块构建的非均匀分布式功率放大器提供适用于电子战和通信应用的超宽带多倍频程装置，特别是替代行波管。
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公开(公告)号：US20080017844A1
公开(公告)日：2008-01-24
申请号：US11632670
申请日：2005-12-01
申请人： Kirby Nichols , Robert Actis , Dong Xu , Wendell Kong
发明人： Kirby Nichols , Robert Actis , Dong Xu , Wendell Kong
IPC分类号： H01L29/24 , H01L21/338 , H01L29/739
CPC分类号： H01L29/42376 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/314 , H01L29/66462 , H01L29/7784
摘要： A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.
摘要翻译： 伪高电子迁移率晶体管（PHEMT）包括衬底，设置在衬底上的低温生长（LTG）GaAs栅极 - 绝缘体层以及设置在栅绝缘体层上的栅电极。
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公开(公告)号：US20120268213A1
公开(公告)日：2012-10-25
申请号：US13016599
申请日：2011-01-28
CPC分类号： H03F3/195 , H03F2200/405
摘要： A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.
摘要翻译： 高功率放大器架构是公开的。 一个示例配置包括可操作地耦合在第一串中的第一多个分布式放大级。 与第一串相关联的导电迹线提供阶梯结构，使得相关联的电感从第一串的输入到输出连续减小。 第二组分布式放大级可操作地耦合在第二串中，与之相关联的导电迹线提供阶梯式结构，使得相关联的电感从第二串的输入到输出相继减小。 在一个示例性情况下，第一和第二串中的每一个包括在碳化硅上形成的氮化镓晶体管放大级。 模块还可以包括热和电耦合到放大级的散热器材料。 与一个字符串相关联的导电迹线可以与另一个字符串共享。
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公开(公告)号：US20120081182A1
公开(公告)日：2012-04-05
申请号：US13316900
申请日：2011-12-12
IPC分类号： H03F3/60
CPC分类号： H03F3/607 , H03F2200/36
摘要： A broadband high power amplifier architecture is disclosed. One example configuration includes a first plurality of distributed amplification cells connected in a first string, wherein a conductive trace operatively coupling outputs of the first string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the first string. The amplifier further includes a second plurality of distributed amplification cells connected in a second string, wherein a conductive trace operatively coupling outputs of the second string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the second string. A combiner combines output signals of the first and second strings. Additional strings and/or stages can be provided, and the degree of combining will depend, for example, on factors such as the application and desired output power.
摘要翻译： 公开了宽带高功率放大器架构。 一个示例配置包括以第一串连接的第一多个分布式放大单元，其中可操作地耦合第一串单元的输出的导电迹线是阶梯结构，使得相关联的电感从第一单元到第一单元 第一个字符串 放大器还包括以第二串连接的第二多个分布式放大单元，其中可操作地耦合第二串单元的输出的导电迹线是阶梯式结构，使得相关联的电感从第一单元到第一单元 第二个字符串。 组合器组合第一和第二串的输出信号。 可以提供额外的串和/或级，并且组合的程度将取决于例如应用和期望的输出功率等因素。
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公开(公告)号：US08669812B2
公开(公告)日：2014-03-11
申请号：US13016599
申请日：2011-01-28
IPC分类号： H03F3/60
CPC分类号： H03F3/195 , H03F2200/405
摘要： A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.
摘要翻译： 高功率放大器架构是公开的。 一个示例配置包括可操作地耦合在第一串中的第一多个分布式放大级。 与第一串相关联的导电迹线提供阶梯结构，使得相关联的电感从第一串的输入到输出连续减小。 第二组分布式放大级可操作地耦合在第二串中，与之相关联的导电迹线提供阶梯式结构，使得相关联的电感从第二串的输入到输出相继减小。 在一个示例性情况下，第一和第二串中的每一个包括在碳化硅上形成的氮化镓晶体管放大级。 模块还可以包括热和电耦合到放大级的散热器材料。 与一个字符串相关联的导电迹线可以与另一个字符串共享。
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8.发明授权Solid-state ultra-wideband microwave power amplifier employing modular non-uniform distributed amplifier elements 有权采用模块化非均匀分布式放大器元件的固态超宽带微波功率放大器公开(公告)号：US07924097B2
公开(公告)日：2011-04-12
申请号：US11629025
申请日：2005-11-01
IPC分类号： H03F3/60
CPC分类号： H03F3/211 , H03F1/42 , H03F3/195 , H03F3/604 , H03F3/607 , H03F2200/39 , H03F2200/453 , H03F2200/543 , H03F2203/21106 , H03F2203/21142 , H03F2203/21178
摘要： A number of identical non-uniformly distributed ultra-wideband power amplifier string building blocks are coupled together to form an ultra-wide bandwidth high-power amplifier. The non-uniform distribution results in an amplifier utilizing modular string building blocks that have input and output impedances with only real values. This permits the strings to be replicated and connected together with simple impedance matching. The internal impedance matching associated with the non-linear distribution also absorbs parasitic capacitance to permit the ultra-broadband operation. In one embodiment identical transistors are used for each cell so that the strings may be identically replicated. This permits modular re-use without reconfiguration. In one embodiment a non-uniform distributed power amplifier built using the subject building blocks provides an ultra-wideband multi-octave device suitable for electronic warfare and communications applications, especially to replace traveling wave tubes.
摘要翻译： 许多相同的非均匀分布的超宽带功率放大器串构造块被耦合在一起以形成超宽带宽大功率放大器。 不均匀分布导致使用具有仅具有实际值的输入和输出阻抗的模块化串构造块的放大器。 这允许串被复制和连接在一起与简单的阻抗匹配。 与非线性分布相关的内部阻抗匹配也吸收寄生电容以允许超宽带操作。 在一个实施例中，相同的晶体管用于每个单元，使得串可以被相同复制。 这允许模块化重新使用而不重新配置。 在一个实施例中，使用对象构建块构建的非均匀分布式功率放大器提供适用于电子战和通信应用的超宽带多倍频程装置，特别是替代行波管。
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公开(公告)号：US20070215708A1
公开(公告)日：2007-09-20
申请号：US11724592
申请日：2007-03-15
申请人： Robert Actis
发明人： Robert Actis
IPC分类号： G06K7/10
CPC分类号： G06K7/10544
摘要： Disclosed are embodiments of methods, systems, and apparatus for generating a continuous virtual scan line pattern from a raster line input. In certain preferred embodiments, a continuous, omni-directional virtual scan line pattern may be generated from a continuous, one-dimensional raster line input. In some embodiments, such a pattern may be generated for one or more families of shallow virtual scan lines and for one or more families of steep virtual scan lines. Some of the virtual scan line families may be configured to generate overlapping data.
摘要翻译： 公开了用于从光栅线输入生成连续虚拟扫描线图案的方法，系统和装置的实施例。 在某些优选实施例中，连续的全向虚拟扫描线图案可以从连续的一维光栅线输入生成。 在一些实施例中，可以为一个或多个浅虚拟扫描线族和陡峭虚拟扫描线的一个或多个族生成这样的图案。 一些虚拟扫描线系列可以被配置为生成重叠的数据。
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公开(公告)号：US09024326B2
公开(公告)日：2015-05-05
申请号：US13879696
申请日：2012-07-18
申请人： Robert Actis , Pane-chane Chao , Robert J. Lender, Jr. , Kanin Chu , Bernard J. Schmanski , Sue May Jessup
发明人： Robert Actis , Pane-chane Chao , Robert J. Lender, Jr. , Kanin Chu , Bernard J. Schmanski , Sue May Jessup
IPC分类号： H01L29/15 , H01L23/373 , H01L23/66 , H01L23/48
CPC分类号： H01L23/373 , H01L23/481 , H01L23/66 , H01L2223/6622 , H01L2223/6627 , H01L2224/4847 , H01L2924/10272 , H01L2924/1033 , H01L2924/1421 , H01L2924/3011 , H01L2924/30111 , H01L2924/00
摘要： In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned metalized strip, with the substrate having a patterned metalized layer on the back side that is provided with a keep away zone dimensioned to provide impedance matching for RF energy coupled through the substrate to the semiconductor device while at the same time permitting the heat generated by the semiconductor device to flow through the high thermal conductivity substrate, through the back side of the substrate and to a beat sink.
摘要翻译： 总而言之，以通孔形式的垂直金属化转变从高导热性衬底的背面开始并通过其上的任何半导体层到图案化的金属化带，衬底在背面具有图案化的金属化层， 具有保留区，其尺寸设置成为通过衬底耦合到半导体器件的RF能量提供阻抗匹配，同时允许由半导体器件产生的热量流过高导热性衬底，通过该衬底的背面 底物和一个水槽。
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