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公开(公告)号：US08669812B2
公开(公告)日：2014-03-11
申请号：US13016599
申请日：2011-01-28
IPC分类号： H03F3/60
CPC分类号： H03F3/195 , H03F2200/405
摘要： A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.
摘要翻译： 高功率放大器架构是公开的。 一个示例配置包括可操作地耦合在第一串中的第一多个分布式放大级。 与第一串相关联的导电迹线提供阶梯结构，使得相关联的电感从第一串的输入到输出连续减小。 第二组分布式放大级可操作地耦合在第二串中，与之相关联的导电迹线提供阶梯式结构，使得相关联的电感从第二串的输入到输出相继减小。 在一个示例性情况下，第一和第二串中的每一个包括在碳化硅上形成的氮化镓晶体管放大级。 模块还可以包括热和电耦合到放大级的散热器材料。 与一个字符串相关联的导电迹线可以与另一个字符串共享。
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公开(公告)号：US20120268213A1
公开(公告)日：2012-10-25
申请号：US13016599
申请日：2011-01-28
CPC分类号： H03F3/195 , H03F2200/405
摘要： A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.
摘要翻译： 高功率放大器架构是公开的。 一个示例配置包括可操作地耦合在第一串中的第一多个分布式放大级。 与第一串相关联的导电迹线提供阶梯结构，使得相关联的电感从第一串的输入到输出连续减小。 第二组分布式放大级可操作地耦合在第二串中，与之相关联的导电迹线提供阶梯式结构，使得相关联的电感从第二串的输入到输出相继减小。 在一个示例性情况下，第一和第二串中的每一个包括在碳化硅上形成的氮化镓晶体管放大级。 模块还可以包括热和电耦合到放大级的散热器材料。 与一个字符串相关联的导电迹线可以与另一个字符串共享。
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