发明授权
- 专利标题: Film deposition apparatus and substrate processing apparatus
- 专利标题(中): 薄膜沉积装置和基板处理装置
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申请号: US12550453申请日: 2009-08-31
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公开(公告)号: US08673079B2公开(公告)日: 2014-03-18
- 发明人: Hitoshi Kato , Manabu Honma , Tomoki Haneishi
- 申请人: Hitoshi Kato , Manabu Honma , Tomoki Haneishi
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: IPUSA, PLLC
- 优先权: JP2008-227028 20080904
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; C23C16/00
摘要:
A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip.