Invention Grant
- Patent Title: Crucible and deposition apparatus
- Patent Title (中): 坩埚和沉积设备
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Application No.: US13980875Application Date: 2012-01-13
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Publication No.: US08673082B2Publication Date: 2014-03-18
- Inventor: Satoshi Inoue , Shinichi Kawato , Tohru Sonoda
- Applicant: Satoshi Inoue , Shinichi Kawato , Tohru Sonoda
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Morrison & Foerster LLP
- Priority: JP2011-010174 20110120
- International Application: PCT/JP2012/050581 WO 20120113
- International Announcement: WO2012/099012 WO 20120726
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
A crucible (50) of the present invention includes: an opening (55a) from which vapor deposition particles are injected toward a film formation substrate on which a film is to be formed; a focal point member (54a), provided so as to face the opening (55a), which reflects vapor deposition particles injected from the opening (55a); and a revolution paraboloid (55b) which reflects, toward the film formation substrate, vapor deposition particles which have been reflected by the focal point member (54a).
Public/Granted literature
- US20130291796A1 CRUCIBLE AND DEPOSITION APPARATUS Public/Granted day:2013-11-07
Information query
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