发明授权
- 专利标题： Crucible and deposition apparatus
- 专利标题（中）： 坩埚和沉积设备
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申请号： US13980875申请日： 2012-01-13
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公开(公告)号： US08673082B2公开(公告)日： 2014-03-18
- 发明人: Satoshi Inoue , Shinichi Kawato , Tohru Sonoda
- 申请人： Satoshi Inoue , Shinichi Kawato , Tohru Sonoda
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Morrison & Foerster LLP
- 优先权： JP2011-010174 20110120
- 国际申请： PCT/JP2012/050581 WO 20120113
- 国际公布： WO2012/099012 WO 20120726
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
A crucible (50) of the present invention includes: an opening (55a) from which vapor deposition particles are injected toward a film formation substrate on which a film is to be formed; a focal point member (54a), provided so as to face the opening (55a), which reflects vapor deposition particles injected from the opening (55a); and a revolution paraboloid (55b) which reflects, toward the film formation substrate, vapor deposition particles which have been reflected by the focal point member (54a).
公开/授权文献
- US20130291796A1 CRUCIBLE AND DEPOSITION APPARATUS 公开/授权日：2013-11-07
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