Invention Grant
- Patent Title: System and method for fine pitch PoP structure
- Patent Title (中): 细间距PoP结构的系统和方法
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Application No.: US13399437Application Date: 2012-02-17
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Publication No.: US08674496B2Publication Date: 2014-03-18
- Inventor: Cheng-Chung Lin , Hsiu-Jen Lin , Cheng-Ting Chen , Chun-Cheng Lin , Ming-Da Cheng , Chung-Shi Liu
- Applicant: Cheng-Chung Lin , Hsiu-Jen Lin , Cheng-Ting Chen , Chun-Cheng Lin , Ming-Da Cheng , Chung-Shi Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L25/07
- IPC: H01L25/07

Abstract:
A fine pitch package-on-package (PoP), and a method of forming, are provided. The PoP may be formed by placing connections, e.g., solder balls, on a first substrate having a semiconductor die attached thereto. A first reflow process is performed to elongate the solder balls. Thereafter, a second substrate having another semiconductor die attached thereto is connected to the solder balls. A second reflow process is performed to form an hourglass connection.
Public/Granted literature
- US20130214401A1 System and Method for Fine Pitch PoP Structure Public/Granted day:2013-08-22
Information query
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