Invention Grant
- Patent Title: Semiconductor device and method of manufacture thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13967053Application Date: 2013-08-14
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Publication No.: US08674800B2Publication Date: 2014-03-18
- Inventor: Stefan Willkofer , Uwe Wahl , Bernhard Knott , Markus Hammer , Andreas Strasser
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/28

Abstract:
A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
Public/Granted literature
- US20130328166A1 Semiconductor Device and Method of Manufacture Thereof Public/Granted day:2013-12-12
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