公开(公告)号：US09269654B2

公开(公告)日：2016-02-23

申请号：US14180146

申请日：2014-02-13

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC: H01F5/00 ,  H01F27/28 ,  H01L23/495 ,  H01L23/48 ,  H01L23/522 ,  H01L25/065 ,  H01L49/02 ,  H01L23/64 ,  H01L23/00 ,  H01F17/00

CPC classification number: H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

公开(公告)号：US08674800B2

公开(公告)日：2014-03-18

申请号：US13967053

申请日：2013-08-14

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC: H01F5/00 ,  H01F27/28

CPC classification number: H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract translation: 公开了半导体器件，半导体器件的制造方法和发送信号的方法。 根据本发明的实施例，半导体器件包括第一半导体芯片，其包括第一线圈，第二半导体芯片，包括感应耦合到第一线圈的第二线圈，以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。

公开(公告)号：US20140159220A1

公开(公告)日：2014-06-12

申请号：US14180146

申请日：2014-02-13

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC: H01L23/495 ,  H01L23/64

CPC classification number: H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract translation: 公开了半导体器件，半导体器件的制造方法和发送信号的方法。 根据本发明的实施例，半导体器件包括第一半导体芯片，其包括第一线圈，第二半导体芯片，包括感应耦合到第一线圈的第二线圈，以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。

公开(公告)号：US20130328166A1

公开(公告)日：2013-12-12

申请号：US13967053

申请日：2013-08-14

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC: H01L49/02

CPC classification number: H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract translation: 公开了半导体器件，半导体器件的制造方法和发送信号的方法。 根据本发明的实施例，半导体器件包括第一半导体芯片，其包括第一线圈，第二半导体芯片，包括感应耦合到第一线圈的第二线圈，以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。