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公开(公告)号:US09269654B2
公开(公告)日:2016-02-23
申请号:US14180146
申请日:2014-02-13
Applicant: Infineon Technologies AG
Inventor: Stefan Willkofer , Uwe Wahl , Bernhard Knott , Markus Hammer , Andreas Strasser
IPC: H01F5/00 , H01F27/28 , H01L23/495 , H01L23/48 , H01L23/522 , H01L25/065 , H01L49/02 , H01L23/64 , H01L23/00 , H01F17/00
CPC classification number: H01L23/4952 , H01F2017/0086 , H01L23/48 , H01L23/49575 , H01L23/5227 , H01L23/645 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L28/10 , H01L2224/32145 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/4903 , H01L2224/49107 , H01L2224/73215 , H01L2224/73265 , H01L2924/00014 , H01L2924/01322 , H01L2924/14 , H01L2924/19042 , H01L2924/19102 , H01L2924/19104 , H01L2924/19107 , Y10T29/4902 , H01L2924/00 , H01L2224/45015 , H01L2924/207
Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
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公开(公告)号:US08674800B2
公开(公告)日:2014-03-18
申请号:US13967053
申请日:2013-08-14
Applicant: Infineon Technologies AG
Inventor: Stefan Willkofer , Uwe Wahl , Bernhard Knott , Markus Hammer , Andreas Strasser
CPC classification number: H01L23/4952 , H01F2017/0086 , H01L23/48 , H01L23/49575 , H01L23/5227 , H01L23/645 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L28/10 , H01L2224/32145 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/4903 , H01L2224/49107 , H01L2224/73215 , H01L2224/73265 , H01L2924/00014 , H01L2924/01322 , H01L2924/14 , H01L2924/19042 , H01L2924/19102 , H01L2924/19104 , H01L2924/19107 , Y10T29/4902 , H01L2924/00 , H01L2224/45015 , H01L2924/207
Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
Abstract translation: 公开了半导体器件,半导体器件的制造方法和发送信号的方法。 根据本发明的实施例,半导体器件包括第一半导体芯片,其包括第一线圈,第二半导体芯片,包括感应耦合到第一线圈的第二线圈,以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。
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公开(公告)号:US20140159220A1
公开(公告)日:2014-06-12
申请号:US14180146
申请日:2014-02-13
Applicant: Infineon Technologies AG
Inventor: Stefan Willkofer , Uwe Wahl , Bernhard Knott , Markus Hammer , Andreas Strasser
IPC: H01L23/495 , H01L23/64
CPC classification number: H01L23/4952 , H01F2017/0086 , H01L23/48 , H01L23/49575 , H01L23/5227 , H01L23/645 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L28/10 , H01L2224/32145 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/4903 , H01L2224/49107 , H01L2224/73215 , H01L2224/73265 , H01L2924/00014 , H01L2924/01322 , H01L2924/14 , H01L2924/19042 , H01L2924/19102 , H01L2924/19104 , H01L2924/19107 , Y10T29/4902 , H01L2924/00 , H01L2224/45015 , H01L2924/207
Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
Abstract translation: 公开了半导体器件,半导体器件的制造方法和发送信号的方法。 根据本发明的实施例,半导体器件包括第一半导体芯片,其包括第一线圈,第二半导体芯片,包括感应耦合到第一线圈的第二线圈,以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。
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公开(公告)号:US20130328166A1
公开(公告)日:2013-12-12
申请号:US13967053
申请日:2013-08-14
Applicant: Infineon Technologies AG
Inventor: Stefan Willkofer , Uwe Wahl , Bernhard Knott , Markus Hammer , Andreas Strasser
IPC: H01L49/02
CPC classification number: H01L23/4952 , H01F2017/0086 , H01L23/48 , H01L23/49575 , H01L23/5227 , H01L23/645 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L28/10 , H01L2224/32145 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/4903 , H01L2224/49107 , H01L2224/73215 , H01L2224/73265 , H01L2924/00014 , H01L2924/01322 , H01L2924/14 , H01L2924/19042 , H01L2924/19102 , H01L2924/19104 , H01L2924/19107 , Y10T29/4902 , H01L2924/00 , H01L2224/45015 , H01L2924/207
Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
Abstract translation: 公开了半导体器件,半导体器件的制造方法和发送信号的方法。 根据本发明的实施例,半导体器件包括第一半导体芯片,其包括第一线圈,第二半导体芯片,包括感应耦合到第一线圈的第二线圈,以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。
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