发明授权
- 专利标题: Sputtering target of ferromagnetic material with low generation of particles
- 专利标题(中): 铁磁材料的溅射靶与低代粒子
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申请号: US13320840申请日: 2010-09-30
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公开(公告)号: US08679268B2公开(公告)日: 2014-03-25
- 发明人: Shin-ichi Ogino , Atsushi Sato , Yuichiro Nakamura , Atsutoshi Arakawa
- 申请人: Shin-ichi Ogino , Atsushi Sato , Yuichiro Nakamura , Atsutoshi Arakawa
- 申请人地址: JP Tokyo
- 专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Howson & Howson LLP
- 优先权: JP2010-163296 20100720
- 国际申请: PCT/JP2010/067179 WO 20100930
- 国际公布: WO2012/011204 WO 20120126
- 主分类号: C23C14/06
- IPC分类号: C23C14/06 ; C23C14/34 ; H01F41/18 ; C22C19/07
摘要:
A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
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