Invention Grant
- Patent Title: Mask system and method of patterning magnetic media
- Patent Title (中): 磁性介质的掩模系统和方法
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Application No.: US13111657Application Date: 2011-05-19
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Publication No.: US08679356B2Publication Date: 2014-03-25
- Inventor: Alexander C. Kontos , Frank Sinclair , Anthony Renau
- Applicant: Alexander C. Kontos , Frank Sinclair , Anthony Renau
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
A method of patterning a substrate, comprises patterning a photoresist layer disposed on the substrate using imprint lithography and etching exposed portions of a hard mask layer disposed between the patterned photoresist layer and the substrate. The method may also comprise implanting ions into a magnetic layer in the substrate while the etched hard mask layer is disposed thereon.
Public/Granted literature
- US20120292285A1 MASK SYSTEM AND METHOD OF PATTERNING MAGNETIC MEDIA Public/Granted day:2012-11-22
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