发明授权
- 专利标题： Mask system and method of patterning magnetic media
- 专利标题（中）： 磁性介质的掩模系统和方法
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申请号： US13111657申请日： 2011-05-19
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公开(公告)号： US08679356B2公开(公告)日： 2014-03-25
- 发明人: Alexander C. Kontos , Frank Sinclair , Anthony Renau
- 申请人： Alexander C. Kontos , Frank Sinclair , Anthony Renau
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： B44C1/22
- IPC分类号： B44C1/22
摘要：
A method of patterning a substrate, comprises patterning a photoresist layer disposed on the substrate using imprint lithography and etching exposed portions of a hard mask layer disposed between the patterned photoresist layer and the substrate. The method may also comprise implanting ions into a magnetic layer in the substrate while the etched hard mask layer is disposed thereon.
公开/授权文献
- US20120292285A1 MASK SYSTEM AND METHOD OF PATTERNING MAGNETIC MEDIA 公开/授权日：2012-11-22
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