- 专利标题： Low temperature deposition of phase change memory materials
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申请号： US13610928申请日： 2012-09-12
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公开(公告)号： US08679894B2公开(公告)日： 2014-03-25
- 发明人: Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
- 申请人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Hultquist, PLLC
- 代理商 Steven J. Hultquist; Maggie Chappuis
- 主分类号： H01L51/40
- IPC分类号： H01L51/40
摘要：
A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
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