发明授权
- 专利标题： Method for self-aligned doubled patterning lithography
- 专利标题（中）： 自对准双重图案平版印刷的方法
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申请号： US12943808申请日： 2010-11-10
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公开(公告)号： US08679981B1公开(公告)日： 2014-03-25
- 发明人: Milind Weling , Judy Huckabay , Abdurrahman Sezginer
- 申请人： Milind Weling , Judy Huckabay , Abdurrahman Sezginer
- 申请人地址： US CA San Jose
- 专利权人： Cadence Design Systems, Inc.
- 当前专利权人： Cadence Design Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Kenyon & Kenyon LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Various embodiments of the invention provide systems and methods for semiconductor device fabrication and generation of photomasks for patterning a target layout of line features and large features. Embodiments of the invention are directed towards systems and methods using self-aligned double pattern to define the target layout of line features and large features.
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