发明授权
US08679988B2 Plasma processing of metal oxide films for resistive memory device applications
有权
用于电阻式存储器件应用的金属氧化物膜的等离子体处理
- 专利标题： Plasma processing of metal oxide films for resistive memory device applications
- 专利标题（中）： 用于电阻式存储器件应用的金属氧化物膜的等离子体处理
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申请号： US13302777申请日： 2011-11-22
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公开(公告)号： US08679988B2公开(公告)日： 2014-03-25
- 发明人: Albert Lee , Chi-I Lang
- 申请人： Albert Lee , Chi-I Lang
- 申请人地址： US CA San Jose
- 专利权人： Intermolecular, Inc.
- 当前专利权人： Intermolecular, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
In some embodiments, the present invention discloses plasma processing at interfaces of an ALD metal oxide film with top and bottom electrodes to improve the ReRAM device characteristics. The interface processing can comprise an oxygen inhibitor step with a bottom polysilicon electrode to prevent oxidation of the polysilicon layer, enhancing the electrical contact of the metal oxide film with the polysilicon electrode. The interface processing can comprise an oxygen enrichment step with a top metal electrode to increase the resistivity of the metal oxide layer, providing an integrated current limiter layer.
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