公开(公告)号：US08679988B2

公开(公告)日：2014-03-25

申请号：US13302777

申请日：2011-11-22

Applicant: Albert Lee ,  Chi-I Lang

Inventor： Albert Lee ,  Chi-I Lang

IPC: H01L21/00

CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/146

Abstract: In some embodiments, the present invention discloses plasma processing at interfaces of an ALD metal oxide film with top and bottom electrodes to improve the ReRAM device characteristics. The interface processing can comprise an oxygen inhibitor step with a bottom polysilicon electrode to prevent oxidation of the polysilicon layer, enhancing the electrical contact of the metal oxide film with the polysilicon electrode. The interface processing can comprise an oxygen enrichment step with a top metal electrode to increase the resistivity of the metal oxide layer, providing an integrated current limiter layer.

Abstract translation: 在一些实施例中，本发明公开了在ALD金属氧化物膜与顶部和底部电极的界面处的等离子体处理，以改善ReRAM器件的特性。 界面处理可以包括具有底部多晶硅电极的氧抑制剂步骤，以防止多晶硅层氧化，增强金属氧化物膜与多晶硅电极的电接触。 界面处理可以包括具有顶部金属电极的富氧步骤以增加金属氧化物层的电阻率，从而提供集成的限流器层。

公开(公告)号：US20130130464A1

公开(公告)日：2013-05-23

申请号：US13302777

申请日：2011-11-22

Applicant: Albert Lee ,  Chi-I Lang

Inventor： Albert Lee ,  Chi-I Lang

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/146

Abstract: In some embodiments, the present invention discloses plasma processing at interfaces of an ALD metal oxide film with top and bottom electrodes to improve the ReRAM device characteristics. The interface processing can comprise an oxygen inhibitor step with a bottom polysilicon electrode to prevent oxidation of the polysilicon layer, enhancing the electrical contact of the metal oxide film with the polysilicon electrode. The interface processing can comprise an oxygen enrichment step with a top metal electrode to increase the resistivity of the metal oxide layer, providing an integrated current limiter layer.

Abstract translation: 在一些实施例中，本发明公开了在ALD金属氧化物膜与顶部和底部电极的界面处的等离子体处理，以改善ReRAM器件的特性。 界面处理可以包括具有底部多晶硅电极的氧抑制剂步骤，以防止多晶硅层氧化，增强金属氧化物膜与多晶硅电极的电接触。 界面处理可以包括具有顶部金属电极的富氧步骤以增加金属氧化物层的电阻率，从而提供集成的限流器层。

公开(公告)号：US08683420B2

公开(公告)日：2014-03-25

申请号：US12948257

申请日：2010-11-17

Applicant: Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

Inventor： Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

IPC: G06F17/50

CPC classification number: H01L22/14

Abstract: A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

Abstract translation: 改进的可靠性测试的方法和系统包括提供第一衬底和第二衬底，每个衬底仅包括第一金属化层; 通过组合地改变材料，单元过程和工艺顺序中的至少一个来处理第一衬底上的处理区域; 对所述第一基板上的所述经处理区域进行第一可靠性测试以产生第一结果; 基于第一可靠性测试的第一结果，通过改变材料，单元过程和过程序列中的至少一个来以组合的方式处理第二基板上的区域; 对所述第二基板上的所述经处理区域进行第二可靠性测试以产生第二结果; 以及基于所述第二结果来确定所述第一基板和所述第二基板是否满足预定质量阈值。

公开(公告)号：US08657966B2

公开(公告)日：2014-02-25

申请号：US13058803

申请日：2009-08-12

Applicant: Nikhil D. Kalyankar ,  Chi-I Lang ,  Zachary Fresco

Inventor： Nikhil D. Kalyankar ,  Chi-I Lang ,  Zachary Fresco

IPC: B08B3/00 ,  C11D7/00

CPC classification number: C11D11/0047 ,  B08B3/10 ,  C11D7/265 ,  C11D7/28 ,  C11D7/34 ,  C11D7/36 ,  C11D7/5004

Abstract: Embodiments of the current invention describe cleaning solutions to clean the surface of a photomask, methods of cleaning the photomask using at least one of the cleaning solutions, and combinatorial methods of formulating the cleaning solutions. The cleaning solutions are formulated to preserve the optical properties of the photomask, and in particular, of a phase-shifting photomask.

Abstract translation: 本发明的实施例描述了清洁光掩模表面的清洁溶液，使用至少一种清洁溶液清洁光掩模的方法以及配制清洁溶液的组合方法。 制备清洁溶液以保持光掩模的光学性质，特别是相移光掩模。

公开(公告)号：US08609475B2

公开(公告)日：2013-12-17

申请号：US13602637

申请日：2012-09-04

Applicant: Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

Inventor： Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

IPC: H01L21/20 ,  H01L21/00 ,  H01L21/16 ,  H01L21/8229

CPC classification number: H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

Abstract: Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pre-treating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material.

Abstract translation: 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并且在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法。

公开(公告)号：US08580697B1

公开(公告)日：2013-11-12

申请号：US13031077

申请日：2011-02-18

Applicant: Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

Inventor： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC: H01L21/02

CPC classification number: H01L21/76837 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826

Abstract: The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

公开(公告)号：US08551560B2

公开(公告)日：2013-10-08

申请号：US12471310

申请日：2009-05-22

Applicant: Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

Inventor： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

IPC: C23C18/18 ,  C23C18/34 ,  C23C18/36 ,  C23C18/50

CPC classification number: H01L21/288 ,  C23C18/1605 ,  C23C18/168 ,  C23C18/50 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/76829 ,  H01L21/76849

Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

Abstract translation: 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。

公开(公告)号：US20130171350A1

公开(公告)日：2013-07-04

申请号：US13339563

申请日：2011-12-29

Applicant: Philip A. Kraus ,  Tony P. Chiang ,  Timothy Joseph Franklin ,  Chi-I Lang ,  Sandeep Nijhawan

Inventor： Philip A. Kraus ,  Tony P. Chiang ,  Timothy Joseph Franklin ,  Chi-I Lang ,  Sandeep Nijhawan

IPC: C23C16/44 ,  B05C11/00

CPC classification number: C23C16/303 ,  C23C16/45508 ,  C23C16/52

Abstract: A metal-organic chemical vapor deposition (MOCVD) system is provided for high throughput processing. The system comprises a chamber containing a substrate support system comprising a plurality of substrate support planets operable to support one or more substrates, and a gas emission system operable to provide a plurality of isolated environments suitable for depositing uniform layers on the substrates. The MOCVD system is operable to independently vary one or more process parameters in each isolated environment, and to provide common process parameters to all substrates for depositing one or more layers on all substrates. Methods of forming uniform layers on a substrate are provided wherein at least one of the layers is deposited in an isolated environment.

Abstract translation: 提供金属有机化学气相沉积（MOCVD）系统用于高通量处理。 该系统包括容纳基板支撑系统的室，该基板支撑系统包括可操作以支撑一个或多个基板的多个基板支撑行星和可操作以提供适合于在基板上沉积均匀层的多个隔离环境的气体排放系统。 MOCVD系统可操作以独立地改变每个隔离环境中的一个或多个工艺参数，并为所有衬底提供共同的工艺参数，以便在所有衬底上沉积一层或多层。 提供了在衬底上形成均匀层的方法，其中至少一个层在孤立环境中沉积。

公开(公告)号：US20130162995A1

公开(公告)日：2013-06-27

申请号：US13337824

申请日：2011-12-27

Applicant: Shuogang Huang ,  Chi-I Lang ,  Jeffrey Chih-Hou Lowe ,  Wen-Guang Yu

Inventor： Shuogang Huang ,  Chi-I Lang ,  Jeffrey Chih-Hou Lowe ,  Wen-Guang Yu

IPC: G01B11/06 ,  G01J4/00

CPC classification number: G01B11/0641

Abstract: A method of measuring the thickness of a one or more layers using ellipsometry is presented which overcomes problems with fitting a model to data collected in the presence of a top surface having a surface roughness (peak-to-trough) greater than about 100 Å. Prior to measurement, the top layer is pretreated to form an oxide layer of thickness between about 15 Å and about 30 Å. Ellipsometry data as a function of wavelength is then collected, and the ellipsometry data is fitted to a model including the oxide layer. For layers of doped polycrystalline silicon layers with a rough surface, the model comprises a layer consisting of a mixture of polycrystalline silicon and amorphous silicon and a top layer consisting of a mixture of polycrystalline silicon and silicon dioxide, and the pretreatment can be performed for about 10 minutes at 600 C in an oxygen atmosphere.

Abstract translation: 提出了一种使用椭偏仪测量一个或多个层的厚度的方法，该方法克服了在存在具有大于约100的表面粗糙度（峰 - 谷）的顶表面的情况下收集的数据的情况下将模型拟合的问题。 在测量之前，顶层被预处理以形成厚度介于约和之间的氧化物层。 然后收集椭圆偏振数据作为波长的函数，并将椭偏仪数据拟合到包括氧化物层的模型。 对于具有粗糙表面的掺杂多晶硅层的层，该模型包括由多晶硅和非晶硅的混合物组成的层以及由多晶硅和二氧化硅的混合物组成的顶层，并且预处理可以进行约 在氧气氛中在600℃下10分钟。

公开(公告)号：US20130101749A1

公开(公告)日：2013-04-25

申请号：US13281299

申请日：2011-10-25

Applicant: Hong Sheng Yang ,  Chi-I Lang

Inventor： Hong Sheng Yang ,  Chi-I Lang

IPC: C23C14/35

CPC classification number: C23C14/351 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458

Abstract: In one aspect of the invention, a process chamber is provided. The process chamber includes a plurality of sputter guns with a target and a main magnet affixed to one end of each of the sputter guns. A substrate support is disposed at a distance from the plurality of sputter guns. An auxiliary magnet is disposed near the substrate. The auxiliary magnet surrounds an outer peripheral surface of the substrate support. In alternative embodiments the magnet may be disposed in a plate or holder disposed below or above the substrate support. In additional embodiments, the auxiliary magnet may be embedded within the substrate support. Furthermore, the auxiliary magnet can either be permanent magnets or electromagnets. A method of performing a deposition process is also included.

Abstract translation: 在本发明的一个方面，提供一种处理室。 处理室包括多个具有目标物体的溅射枪和固定在每个溅射枪的一端的主磁体。 衬底支撑件设置在距离多个溅射枪一定距离处。 辅助磁铁设置在基板附近。 辅助磁体围绕基板支撑件的外周表面。 在替代实施例中，磁体可以设置在设置在基板支撑件下方或上方的板或保持器中。 在另外的实施例中，辅助磁体可以嵌入衬底支撑件内。 此外，辅助磁体可以是永磁体或电磁体。 还包括执行沉积工艺的方法。