Invention Grant
- Patent Title: Microelectromechanical systems type semiconductor gas sensor using microheater having many holes and method for manufacturing the same
- Patent Title (中): 微机电系统使用具有许多孔的微加热器的半导体气体传感器及其制造方法
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Application No.: US13345772Application Date: 2012-01-09
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Publication No.: US08683847B2Publication Date: 2014-04-01
- Inventor: Seung Eon Moon , Jae Woo Lee , Nak Jin Choi , Hyung Kun Lee , Woo Seok Yang , Jong Dae Kim
- Applicant: Seung Eon Moon , Jae Woo Lee , Nak Jin Choi , Hyung Kun Lee , Woo Seok Yang , Jong Dae Kim
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2011-0011436 20110209; KR10-2011-0068818 20110712
- Main IPC: H01L21/02
- IPC: H01L21/02 ; G01N7/04
Abstract:
Disclosed are an MEMS type semiconductor gas sensor using a microheater having many holes and a method for manufacturing the same. The MEMS type semiconductor gas sensor includes: a substrate of which a central region is etched with a predetermined thickness; a second membrane formed at an upper portion of the central region of the substrate and having many holes; a heat emitting resistor formed on the second membrane and having many holes; a first membrane formed on the second membrane including the heat emitting resistor and having many holes; a sensing electrode formed on the first membrane and having many holes; and a sensing material formed on the sensing electrode.
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