Invention Grant
US08685767B2 Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes
有权
用于氮化物发光二极管的双金属AU / AG层的表面等离子体分散工程
- Patent Title: Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes
- Patent Title (中): 用于氮化物发光二极管的双金属AU / AG层的表面等离子体分散工程
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Application No.: US12963117Application Date: 2010-12-08
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Publication No.: US08685767B2Publication Date: 2014-04-01
- Inventor: Nelson Tansu , Hongping Zhao , Jing Zhang , Guangyu Liu
- Applicant: Nelson Tansu , Hongping Zhao , Jing Zhang , Guangyu Liu
- Applicant Address: US PA Bethlehem
- Assignee: Lehigh University
- Current Assignee: Lehigh University
- Current Assignee Address: US PA Bethlehem
- Agency: Saul Ewing LLP
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/44

Abstract:
A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.
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