公开(公告)号：US08685767B2

公开(公告)日：2014-04-01

申请号：US12963117

申请日：2010-12-08

Applicant: Nelson Tansu ,  Hongping Zhao ,  Jing Zhang ,  Guangyu Liu

Inventor： Nelson Tansu ,  Hongping Zhao ,  Jing Zhang ,  Guangyu Liu

IPC: H01L33/32 ,  H01L33/44

CPC classification number: H01L33/06 ,  H01L33/32 ,  H01L33/40

Abstract: A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

Abstract translation: 使用双金属沉积工艺，其中不同金属的相邻层沉积在基底上。 通过形成在其上的第二金属的第二层的表面等离子体频率来调节第一金属的基底层的表面等离子体激元频率。 调谐量取决于金属层的厚度，因此可以通过改变一个或两个金属层的厚度来实现调谐。 在针对绿色光谱方案中的增强型LED技术的优选实施方案中，在InGaN的顶部上沉积包含金（Au）的基底层和其后形成的第二层银（Ag）的双金属Au / Ag层 / GaN量子阱（QWs）在蓝宝石/ GaN衬底上。

公开(公告)号：US20120217472A1

公开(公告)日：2012-08-30

申请号：US13314685

申请日：2011-12-08

Applicant: Nelson Tansu ,  Xiaohang Li ,  Hongping Zhao ,  Guangyu Liu ,  James Foster Gilchrist ,  Pisist Kumnorkaew

Inventor： Nelson Tansu ,  Xiaohang Li ,  Hongping Zhao ,  Guangyu Liu ,  James Foster Gilchrist ,  Pisist Kumnorkaew

IPC: H01L33/04 ,  H01L33/32

CPC classification number: H01L33/20 ,  H01L33/32

Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.

Abstract translation: III型氮化物半导体LED在全部或大部分可见光波长光谱中提供宽带光发射及其制造方法。 LED包括具有三维图案化表面的偏振场管理模板。 该表面可以用半球形空腔阵列构图，其可以通过使模板围绕球形或其它晶体的临时模板层而生长。 该方法涉及在图案化表面上生长量子阱层。 模板图案表面的形貌变化导致量子阱层中相应的拓扑变化。 量子阱层的部分的空间取向的这些变化导致量子阱层的偏振场在LED的表面上变化，这导致在宽波长光谱上提供“白”光发射的能量跃迁偏移。

公开(公告)号：US20110147702A1

公开(公告)日：2011-06-23

申请号：US12967367

申请日：2010-12-14

Applicant: Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Ronald Arif

Inventor： Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Ronald Arif

IPC: H01L33/40

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 Å and 24 Å thick, respectively.

Abstract translation: 基于III族氮化物的器件通过在高电流密度下减少热离子载体逸出来提供改进的电流注入效率。 该器件包括量子阱活性层和围绕有源层对称布置的一对多层势垒层。 每个多层阻挡层包括邻接有源层的内层; 以及邻接内层的外层。 内阻挡层的带隙大于外阻挡层的带隙。 内阻挡层和外阻挡层都具有比活性层大的带隙。 可以在有源层中使用InGaN，可以在内部阻挡层中使用AlInN，AlInGaN或AlGaN，并且可以在外部阻挡层中使用GaN。 优选地，内层相对于其它层是薄的。 在一个实施例中，内阻挡层和有源层分别为15和24。

公开(公告)号：US10115859B2

公开(公告)日：2018-10-30

申请号：US12968960

申请日：2010-12-15

Applicant: Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Gensheng Huang

Inventor： Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Gensheng Huang

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/06 ,  H01L33/32

Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 Å or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

公开(公告)号：US20110204328A1

公开(公告)日：2011-08-25

申请号：US12968960

申请日：2010-12-15

Applicant: Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Gensheng Huang

Inventor： Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Gensheng Huang

IPC: H01L29/06 ,  B82Y99/00

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 Å or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

Abstract translation: 对称量子阱活性层提供增强的内部量子效率。 量子阱活性层包括内（中）层和夹在内层的一对外层。 内层和外层具有不同的厚度和带隙特性。 外层相对较厚并且包括相对较低的带隙材料，例如InGaN。 内层具有相对较低的带隙材料，并且足够薄以充当量子阱δ层，例如包含大约或更小的InN。 这种量子阱结构有利地将发射波长扩展到黄/红光谱状态，并且增强自发发射。 多层量子阱有源层被诸如GaN之类的高带隙材料的阻挡层夹在中间。

公开(公告)号：US20100327783A1

公开(公告)日：2010-12-30

申请号：US12520708

申请日：2007-12-24

Applicant: Nelson Tansu ,  Ronald A. Arif ,  Yik Khoon Ee ,  Hongping Zhao

Inventor： Nelson Tansu ,  Ronald A. Arif ,  Yik Khoon Ee ,  Hongping Zhao

IPC: H01L33/06 ,  H01L21/18 ,  H05B37/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/342 ,  H01S5/3422 ,  H01S5/34333

Abstract: A light emitting device comprising a staggered composition quantum well.

Abstract translation: 一种包括交错组合量子阱的发光器件。

公开(公告)号：US08907321B2

公开(公告)日：2014-12-09

申请号：US12967367

申请日：2010-12-14

Applicant: Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Ronald Arif

Inventor： Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Ronald Arif

IPC: H01L29/06 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 Å and 24 Å thick, respectively.

Abstract translation: 基于III族氮化物的器件通过在高电流密度下减少热离子载体逸出来提供改进的电流注入效率。 该器件包括量子阱活性层和围绕有源层对称布置的一对多层势垒层。 每个多层阻挡层包括邻接有源层的内层; 以及邻接内层的外层。 内阻挡层的带隙大于外阻挡层的带隙。 内阻挡层和外阻挡层都具有比活性层大的带隙。 可以在有源层中使用InGaN，可以在内部阻挡层中使用AlInN，AlInGaN或AlGaN，并且可以在外部阻挡层中使用GaN。 优选地，内层相对于其它层是薄的。 在一个实施例中，内阻挡层和有源层分别为15和24。

公开(公告)号：US08569737B2

公开(公告)日：2013-10-29

申请号：US13314685

申请日：2011-12-08

Applicant: Nelson Tansu ,  Xiaohang Li ,  Hongping Zhao ,  Guangyu Liu ,  James Foster Gilchrist ,  Pisist Kumnorkaew

Inventor： Nelson Tansu ,  Xiaohang Li ,  Hongping Zhao ,  Guangyu Liu ,  James Foster Gilchrist ,  Pisist Kumnorkaew

IPC: H01L31/00 ,  H01L29/06

CPC classification number: H01L33/20 ,  H01L33/32

Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.

Abstract translation: III型氮化物半导体LED在全部或大部分可见光波长光谱中提供宽带光发射及其制造方法。 LED包括具有三维图案化表面的偏振场管理模板。 该表面可以用半球形空腔阵列构图，其可以通过使模板围绕球形或其它晶体的临时模板层而生长。 该方法涉及在图案化表面上生长量子阱层。 模板图案表面的形貌变化导致量子阱层中相应的拓扑变化。 量子阱层的部分的空间取向的这些变化导致量子阱层的偏振场在LED的表面上变化，这导致在宽波长光谱上提供“白”光发射的能量跃迁偏移。

公开(公告)号：US20110133157A1

公开(公告)日：2011-06-09

申请号：US12963117

申请日：2010-12-08

Applicant: Nelson Tansu ,  Hongping Zhao ,  Jing Zhang ,  Guangyu Liu

Inventor： Nelson Tansu ,  Hongping Zhao ,  Jing Zhang ,  Guangyu Liu

IPC: H01L33/04 ,  H01L33/40

CPC classification number: H01L33/06 ,  H01L33/32 ,  H01L33/40

Abstract: A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

Abstract translation: 使用双金属沉积工艺，其中不同金属的相邻层沉积在基底上。 通过形成在其上的第二金属的第二层的表面等离子体频率来调节第一金属的基底层的表面等离子体激元频率。 调谐量取决于金属层的厚度，因此可以通过改变一个或两个金属层的厚度来实现调谐。 在针对绿色光谱方案中的增强型LED技术的优选实施方案中，在InGaN的顶部上沉积包含金（Au）的基底层和其后形成的第二层银（Ag）的双金属Au / Ag层 / GaN量子阱（QWs）在蓝宝石/ GaN衬底上。

公开(公告)号：US08659005B2

公开(公告)日：2014-02-25

申请号：US12520708

申请日：2007-12-24

Applicant: Nelson Tansu ,  Ronald A. Arif ,  Yik Khoon Ee ,  Hongping Zhao

Inventor： Nelson Tansu ,  Ronald A. Arif ,  Yik Khoon Ee ,  Hongping Zhao

IPC: H01L29/06 ,  H01S5/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/342 ,  H01S5/3422 ,  H01S5/34333

Abstract: A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn wherein X is a quantum well component and in one quantum well layer n is a material composition selected for emission at a first target light regime, and in at least one other quantum well layer n is a distinctly different composition for emission at a different target light regime. X may be an In-content layer and the multiple Xn-containing a step function In-content profile.

Abstract translation: 包括交错组合量子阱（QW）的发光器件在QW中具有阶梯函数样轮廓，其通过提供改进的电子 - 空穴波函数重叠来提供更高的辐射效率和光学增益。 交错的QW包括具有明显不同组成的相邻层。 交错的QW具有相邻层Xn，其中X是量子阱分量，并且在一个量子阱层n中，选择用于在第一目标光状态下发射的材料组成，并且在至少一个其它量子阱层n中是明显不同的组成 用于在不同的目标光体系下发射。 X可以是内容层，并且具有多个Xn的步骤功能内容简档。