Invention Grant
US08686540B2 Semiconductor device having high frequency wiring and dummy metal layer at multilayer wiring structure
有权
具有多层布线结构的高频布线和虚设金属层的半导体装置
- Patent Title: Semiconductor device having high frequency wiring and dummy metal layer at multilayer wiring structure
- Patent Title (中): 具有多层布线结构的高频布线和虚设金属层的半导体装置
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Application No.: US13891260Application Date: 2013-05-10
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Publication No.: US08686540B2Publication Date: 2014-04-01
- Inventor: Shinichi Uchida
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2007-264766 20071010
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/8238
Abstract:
A semiconductor device includes a semiconductor substrate, a wiring layer provided over the semiconductor substrate, a high frequency wiring provided in the wiring layer, and plural dummy metals provided in the wiring layer apart from the high frequency wiring. In a plan view, the wiring layer includes a high frequency wiring vicinity region and an external region surrounding the high frequency wiring vicinity region. The high frequency wiring vicinity region includes a first region enclosed by an outer edge of the high frequency wiring, and a second region surrounding the first region. The plural dummy metals are disposed dispersedly in the high frequency wiring vicinity region and in the external region respectively. An average interval between the dummy metals in the high frequency wiring vicinity region is wider than that in the external region.
Public/Granted literature
- US20130241032A1 SEMICONDUCTOR DEVICE HAVING HIGH FREQUENCY WIRING AND DUMMY METAL LAYER AT MULTILAYER WIRING STRUCTURE Public/Granted day:2013-09-19
Information query
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