The invention provides a Ferro-RRAM, a method of operating the Ferro-RRAM, and a method of fabricating the Ferro-RRAM, and pertains to the technical field of memory. The Ferro-RRAM comprises an upper electrode, a lower electrode, and a ferroelectric semiconducting thin-film layer provided between the upper electrode and the lower electrode and serving as a storage function layer; wherein the ferroelectric semiconducting thin-film layer is operable to generate a diode conduction characteristic by ferroelectric domain reorientation, and is operable to modulate the diode conduction characteristic by variation of the ferroelectric domain orientation; the Ferro-RRAM stores information according to variation of modulation of the diode conduction characteristic. The Ferro-RRAM has such characteristics of being simple in structure and fabrication, non-destructive readout and nonvolatile storage.