公开(公告)号：US09354192B2

公开(公告)日：2016-05-31

申请号：US13387044

申请日：2011-04-04

Applicant: Anquan Jiang ,  Xiaobing Liu

Inventor： Anquan Jiang ,  Xiaobing Liu

IPC: G01R19/00 ,  G01R27/00 ,  G01N27/04 ,  G01R27/26

CPC classification number: G01N27/041 ,  G01R27/2623

Abstract: The present invention relates to a ferroelectric analyzing device and a method for adjusting ferroelectric domain switching speed with the ferroelectric analyzing device, and pertains to the technical field of characteristic test of solid-state dielectrics. The ferroelectric analyzing device comprises a voltage pulse generator for generating square pulse signal, which is biased on a ferroelectric thin film so as to switch the polarization of ferroelectric domains, the ferroelectric analyzing device further comprises a variable resistor which is connected in series with the ferroelectric thin film. The variable resistor is used for adjusting domain switching current so as to realize adjustment of domain switching speed of ferroelectric domains. In the method, the square pulse signal is biased on the ferroelectric thin film, and an adjustment of domain switching speed of ferroelectric domains can be realized by adjusting the resistance value of the variable resistor. The device can adjust the moving speed of ferroelectric domains continuously, and can also adjust the coercive voltage of the ferroelectric thin film; it does not depend on the voltage pulse signal generator, can be easily adjusted continuously, has a wide range of adjustment, and is reliable in data tests.

Abstract translation: 铁电分析装置及铁电分析装置的铁电畴切换速度调整方法技术领域本发明涉及铁电分析装置和铁电体分析装置的铁电畴切换速度调整方法，涉及固态电介质的特性试验技术领域。 铁电分析装置包括用于产生平方脉冲信号的电压脉冲发生器，其被偏置在铁电薄膜上以便切换铁电畴的极化，铁电分析装置还包括与铁电体串联连接的可变电阻器 薄膜。 可变电阻用于调整域开关电流，以实现铁电畴的域切换速度的调整。 在该方法中，平方脉冲信号被偏置在铁电薄膜上，并且可以通过调节可变电阻器的电阻值来实现铁电畴的畴切换速度的调节。 该器件可以连续调节铁电体的移动速度，还可以调节铁电薄膜的矫顽电压; 它不依赖于电压脉冲信号发生器，可以方便的连续调节，调节范围广，数据测试可靠。

公开(公告)号：US09176467B2

公开(公告)日：2015-11-03

申请号：US13548981

申请日：2012-07-13

Applicant: Weidong Gu ,  Geming Ding ,  Yonghong Li ,  Zhiyong Li ,  Jianxin Cao ,  Xiong Li ,  Xiaobing Liu

Inventor： Weidong Gu ,  Geming Ding ,  Yonghong Li ,  Zhiyong Li ,  Jianxin Cao ,  Xiong Li ,  Xiaobing Liu

IPC: G03G21/00 ,  G03G21/18

CPC classification number: G03G21/1857 ,  G03G21/186

Abstract: The invention relates to a process cartridge, which comprises a process cartridge housing, a photosensitive member, a driving force receiving opening, a retractable mechanism and a control mechanism, wherein the photosensitive member is arranged inside the process cartridge housing; the driving force receiving opening is connected with the photosensitive member and provides a driving force for the photosensitive member; the retractable mechanism allows the driving force receiving opening to extend or retract in the axial direction of the photosensitive member; and the control mechanism controls the extension and retraction of the retractable mechanism.

Abstract translation: 本发明涉及一种处理盒，其包括处理盒壳体，感光构件，驱动力接收开口，可伸缩机构和控制机构，其中感光构件布置在处理盒壳体内; 驱动力接收开口与感光构件连接，并为感光构件提供驱动力; 可伸缩机构允许驱动力接收开口在感光构件的轴向方向上延伸或缩回; 并且控制机构控制伸缩机构的伸缩。

公开(公告)号：US20120281451A1

公开(公告)日：2012-11-08

申请号：US13266752

申请日：2011-01-12

Applicant: Anquan Jiang ,  Xiaobing Liu

Inventor： Anquan Jiang ,  Xiaobing Liu

IPC: G11C11/22 ,  H01L21/34 ,  H01L29/12

CPC classification number: G11C11/22 ,  G11C13/0007 ,  G11C13/003 ,  G11C2013/0073 ,  G11C2213/72 ,  G11C2213/73 ,  H01L28/55 ,  H01L45/04 ,  H01L45/147 ,  H01L45/1625

Abstract: The invention provides a Ferro-RRAM, a method of operating the Ferro-RRAM, and a method of fabricating the Ferro-RRAM, and pertains to the technical field of memory. The Ferro-RRAM comprises an upper electrode, a lower electrode, and a ferroelectric semiconducting thin-film layer provided between the upper electrode and the lower electrode and serving as a storage function layer; wherein the ferroelectric semiconducting thin-film layer is operable to generate a diode conduction characteristic by ferroelectric domain reorientation, and is operable to modulate the diode conduction characteristic by variation of the ferroelectric domain orientation; the Ferro-RRAM stores information according to variation of modulation of the diode conduction characteristic. The Ferro-RRAM has such characteristics of being simple in structure and fabrication, non-destructive readout and nonvolatile storage.

Abstract translation: 本发明提供了一种Ferro-RRAM，一种操作Ferro-RRAM的方法和一种制造Ferro-RRAM的方法，并且涉及到存储器的技术领域。 Ferro-RRAM包括设置在上电极和下电极之间并用作存储功能层的上电极，下电极和铁电半导体薄膜层; 其中所述铁电半导体薄膜层可操作以通过铁电畴重定向产生二极管导通特性，并且可操作以通过铁电畴取向的变化来调制二极管导通特性; Ferro-RRAM根据二极管传导特性的调制变化存储信息。 Ferro-RRAM具有结构简单，制造简单，非破坏性读出和非易失性存储等特点。

公开(公告)号：US20120275824A1

公开(公告)日：2012-11-01

申请号：US13548981

申请日：2012-07-13

Applicant: Weidong GU ,  Geming DING ,  Yonghong LI ,  Zhiyong LI ,  Jianxin CAO ,  Xiong LI ,  Xiaobing LIU

Inventor： Weidong GU ,  Geming DING ,  Yonghong LI ,  Zhiyong LI ,  Jianxin CAO ,  Xiong LI ,  Xiaobing LIU

IPC: G03G21/18

CPC classification number: G03G21/1857 ,  G03G21/186

Abstract: The invention relates to a process cartridge, which comprises a process cartridge housing, a photosensitive member, a driving force receiving opening, a retractable mechanism and a control mechanism, wherein the photosensitive member is arranged inside the process cartridge housing; the driving force receiving opening is connected with the photosensitive member and provides a driving force for the photosensitive member; the retractable mechanism allows the driving force receiving opening to extend or retract in the axial direction of the photosensitive member; and the control mechanism controls the extension and retraction of the retractable mechanism.

Abstract translation: 本发明涉及一种处理盒，其包括处理盒壳体，感光构件，驱动力接收开口，可伸缩机构和控制机构，其中感光构件布置在处理盒壳体内; 驱动力接收开口与感光构件连接，并为感光构件提供驱动力; 可伸缩机构允许驱动力接收开口在感光构件的轴向方向上延伸或缩回; 并且控制机构控制伸缩机构的伸缩。

公开(公告)号：US08687401B2

公开(公告)日：2014-04-01

申请号：US13266752

申请日：2011-01-12

Applicant: Anquan Jiang ,  Xiaobing Liu

Inventor： Anquan Jiang ,  Xiaobing Liu

IPC: G11C11/22

CPC classification number: G11C11/22 ,  G11C13/0007 ,  G11C13/003 ,  G11C2013/0073 ,  G11C2213/72 ,  G11C2213/73 ,  H01L28/55 ,  H01L45/04 ,  H01L45/147 ,  H01L45/1625

Abstract: The invention provides a Ferro-RRAM, a method of operating the Ferro-RRAM, and a method of fabricating the Ferro-RRAM, and pertains to the technical field of memory. The Ferro-RRAM comprises an upper electrode, a lower electrode, and a ferroelectric semiconducting thin-film layer provided between the upper electrode and the lower electrode and serving as a storage function layer; wherein the ferroelectric semiconducting thin-film layer is operable to generate a diode conduction characteristic by ferroelectric domain reorientation, and is operable to modulate the diode conduction characteristic by variation of the ferroelectric domain orientation; the Ferro-RRAM stores information according to variation of modulation of the diode conduction characteristic. The Ferro-RRAM has such characteristics of being simple in structure and fabrication, non-destructive readout and nonvolatile storage.

Abstract translation: 本发明提供了一种Ferro-RRAM，一种操作Ferro-RRAM的方法和一种制造Ferro-RRAM的方法，并且涉及到存储器的技术领域。 Ferro-RRAM包括设置在上电极和下电极之间并用作存储功能层的上电极，下电极和铁电半导体薄膜层; 其中所述铁电半导体薄膜层可操作以通过铁电畴重定向产生二极管导通特性，并且可操作以通过铁电畴取向的变化来调制二极管导通特性; Ferro-RRAM根据二极管传导特性的调制变化存储信息。 Ferro-RRAM具有结构简单，制造简单，非破坏性读出和非易失性存储等特点。

公开(公告)号：US20140074417A1

公开(公告)日：2014-03-13

申请号：US13387044

申请日：2011-04-04

Applicant: Anquan Jiang ,  Xiaobing Liu

Inventor： Anquan Jiang ,  Xiaobing Liu

IPC: G01N27/04

CPC classification number: G01N27/041 ,  G01R27/2623

Abstract: The present invention relates to a ferroelectric analyzing device and a method for adjusting ferroelectric domain switching speed with the ferroelectric analyzing device, and pertains to the technical field of characteristic test of solid-state dielectrics. The ferroelectric analyzing device comprises a voltage pulse generator for generating square pulse signal, which is biased on a ferroelectric thin film so as to switch the polarization of ferroelectric domains, the ferroelectric analyzing device further comprises a variable resistor which is connected in series with the ferroelectric thin film. The variable resistor is used for adjusting domain switching current so as to realize adjustment of domain switching speed of ferroelectric domains. In the method, the square pulse signal is biased on the ferroelectric thin film, and an adjustment of domain switching speed of ferroelectric domains can be realized by adjusting the resistance value of the variable resistor. The device can adjust the moving speed of ferroelectric domains continuously, and can also adjust the coercive voltage of the ferroelectric thin film; it does not depend on the voltage pulse signal generator, can be easily adjusted continuously, has a wide range of adjustment, and is reliable in data tests.

Abstract translation: 铁电分析装置及铁电分析装置的铁电畴切换速度调整方法技术领域本发明涉及铁电分析装置和铁电体分析装置的铁电畴切换速度调整方法，涉及固态电介质的特性试验技术领域。 铁电分析装置包括用于产生平方脉冲信号的电压脉冲发生器，其被偏置在铁电薄膜上以便切换铁电畴的极化，铁电分析装置还包括与铁电体串联连接的可变电阻器 薄膜。 可变电阻用于调整域开关电流，以实现铁电畴的域切换速度的调整。 在该方法中，平方脉冲信号被偏置在铁电薄膜上，并且可以通过调节可变电阻器的电阻值来实现铁电畴的畴切换速度的调节。 该器件可以连续调节铁电体的移动速度，还可以调节铁电薄膜的矫顽电压; 它不依赖于电压脉冲信号发生器，可以方便的连续调节，调节范围广，数据测试可靠。