Invention Grant
- Patent Title: Magnetic memory with phonon glass electron crystal material
- Patent Title (中): 具有声子玻璃电子晶体材料的磁记忆体
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Application No.: US13779903Application Date: 2013-02-28
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Publication No.: US08687413B2Publication Date: 2014-04-01
- Inventor: Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Mueting Raasch & Gebhardt
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.
Public/Granted literature
- US20130175647A1 MAGNETIC MEMORY WITH PHONON GLASS ELECTRON CRYSTAL MATERIAL Public/Granted day:2013-07-11
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