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公开(公告)号：US09041083B2
公开(公告)日：2015-05-26
申请号：US13748815
申请日：2013-01-24
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yuankai Zheng , Dimitar V. Dimitrov
CPC classification number: H01L29/82 , G11C11/16 , G11C11/161
Abstract: Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.
Abstract translation: 公开了具有镜面绝缘间隔物的磁通闭合自旋转移转矩存储器。 磁通闭合自旋转移转矩存储单元包括多层自由磁性元件，其包括通过电绝缘和电子反射层反铁磁耦合到第二自由磁性层的第一自由磁性层。 电绝缘和非磁性隧道势垒层将自由磁性元件与参考磁性层分离。
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公开(公告)号：US08681539B2
公开(公告)日：2014-03-25
申请号：US13862611
申请日：2013-04-15
Applicant: Seagate Technology LLC
Inventor： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
IPC: G11C11/00
CPC classification number: G11C11/1675 , B82Y10/00 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L43/08
Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.
Abstract translation: 自旋转矩存储器包括复合自由磁性元件，具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层 。 自由磁性元件包括与软磁性层交换的硬磁性层。 复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。
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公开(公告)号：US08670271B2
公开(公告)日：2014-03-11
申请号：US13857410
申请日：2013-04-05
Applicant: Seagate Technology LLC
Inventor： Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
IPC: G11C11/15
CPC classification number: H01L43/02 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/08
Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.
Abstract translation: 具有铁磁自由层和铁磁性固定参考层的磁性隧道结，每个具有面外磁各向异性和面外磁化取向，所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层，辅助层具有小于700Oe的低磁各向异性，并定位成在自由层上施加磁场。
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公开(公告)号：US20130200476A1
公开(公告)日：2013-08-08
申请号：US13829137
申请日：2013-03-14
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yuankai Zheng , Xiaohua Lou , Wei Tian , Zheng Gao , Haiwen Xi
IPC: H01L43/02
CPC classification number: H01L43/02 , B82Y40/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.
Abstract translation: 一种具有声阻隔绝缘层的非易失性存储单元的装置和相关方法。 根据各种实施例，磁性堆叠具有隧道结，铁磁自由层，被钉扎层和由电绝缘材料和热绝缘材料构成的绝缘层，其阻挡声子同时允许通过至少一个导电特征的电传输。
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公开(公告)号：US08780619B2
公开(公告)日：2014-07-15
申请号：US13934998
申请日：2013-07-03
Applicant: Seagate Technology LLC
Inventor： Haiwen Xi , Yuankai Zheng , Xiaobin Wang , Dimitar V. Dimitrov , Pat J. Ryan
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228
Abstract: An apparatus and method for storing data in a semiconductor memory. In accordance with some embodiments, the semiconductor memory has a continuous storage layer of soft ferromagnetic material having opposing top and bottom surfaces with overall length and width dimensions and an overall thickness dimension between the opposing top and bottom surfaces. A plurality of spaced apart, discrete reference layers are adjacent a selected one of the opposing top or bottom surfaces of the continuous storage layer with each having a fixed magnetic orientation. A plurality of spaced apart, discrete barrier layers are disposed in contacting relation between the discrete reference layers and the continuous storage layer.
Abstract translation: 一种用于在半导体存储器中存储数据的装置和方法。 根据一些实施例，半导体存储器具有软铁磁材料的连续存储层，其具有相对的顶部和底部表面，其整体长度和宽度尺寸以及相对的顶部和底部表面之间的整体厚度尺寸。 多个间隔开的离散参考层与连续存储层的相对的顶表面或底表面中的所选择的一个相邻，每个具有固定的磁取向。 多个间隔开的离散阻挡层以离散参考层和连续存储层之间的接触关系设置。
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Patent Agency Ranking
公开(公告)号：US08687413B2
公开(公告)日：2014-04-01
申请号：US13779903
申请日：2013-02-28
Applicant: Seagate Technology LLC
Inventor： Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
IPC: G11C11/00
CPC classification number: H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.
Abstract translation: 磁存储器单元包括分隔自由磁性元件和参考磁性元件的隧道势垒。 第一声子玻璃电子晶体层设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧。 第二声子玻璃电子晶体层也设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧上，以在自由磁性元件和参考磁性元件上提供珀尔帖效应。
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公开(公告)号：US20130175647A1
公开(公告)日：2013-07-11
申请号：US13779903
申请日：2013-02-28
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
IPC: H01L43/02
CPC classification number: H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.
Abstract translation: 磁存储器单元包括分隔自由磁性元件和参考磁性元件的隧道势垒。 第一声子玻璃电子晶体层设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧。 第二声子玻璃电子晶体层也设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧上，以在自由磁性元件和参考磁性元件上提供珀尔帖效应。
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公开(公告)号：US08860157B2
公开(公告)日：2014-10-14
申请号：US13829137
申请日：2013-03-14
Applicant: Seagate Technology LLC
Inventor： Yuankai Zheng , Xiaohua Lou , Wei Tian , Zheng Gao , Haiwen Xi
CPC classification number: H01L43/02 , B82Y40/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.
Abstract translation: 一种具有声阻隔绝缘层的非易失性存储单元的装置和相关方法。 根据各种实施例，磁性堆叠具有隧道结，铁磁自由层，被钉扎层和由电绝缘材料和热绝缘材料构成的绝缘层，其阻挡声子同时允许通过至少一个导电特征的电传输。
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公开(公告)号：US20130292784A1
公开(公告)日：2013-11-07
申请号：US13934998
申请日：2013-07-03
Applicant: Seagate Technology LLC
Inventor： Haiwen Xi , Yuankai Zheng , Xiaobin Wang , Dimitar V. Dimitrov , Pat J. Ryan
IPC: H01L43/02
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228
Abstract: An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.
Abstract translation: 一种用于增强对诸如非易失性数据存储阵列中的磁存储元件的数据写入和保持的装置和方法。 根据各种实施例，可编程存储元件具有参考层和存储层。 参考层具有固定的磁性取向。 存储层被编程为具有与所述固定磁性取向反平行的磁性取向的第一区域和具有与所述固定磁性取向平行的磁性取向的第二区域。 可以将热辅助层结合到存储元件中以增强存储层的局部加热，以帮助在写入操作期间第一区域从平行转变为反平行磁取向。
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公开(公告)号：US20130228884A1
公开(公告)日：2013-09-05
申请号：US13857410
申请日：2013-04-05
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohue Lou , Haiwen Xi
IPC: H01L43/02
CPC classification number: H01L43/02 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/08
Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.
Abstract translation: 具有铁磁自由层和铁磁性固定参考层的磁性隧道结，每个具有面外磁各向异性和面外磁化取向，所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层，辅助层具有小于700Oe的低磁各向异性，并定位成在自由层上施加磁场。
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