公开(公告)号：US08908429B2

公开(公告)日：2014-12-09

申请号：US13784230

申请日：2013-03-04

Applicant: Seagate Technology LLC

Inventor： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

Abstract translation: 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

公开(公告)号：US08792264B2

公开(公告)日：2014-07-29

申请号：US13964402

申请日：2013-08-12

Applicant: Seagate Technology LLC

Inventor： Insik Jin ,  Xiaobin Wang ,  Yong Lu ,  Haiwen Xi

IPC: G11C11/22

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01L43/08

Abstract: A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.

Abstract translation: 一种切换面外磁性隧道结电池的铁磁自由层的磁化取向的方法，该方法包括：使交流开关电流通过面外磁性隧道结电池，其中交流开关电流 切换铁磁自由层的磁化方向。

公开(公告)号：US08681539B2

公开(公告)日：2014-03-25

申请号：US13862611

申请日：2013-04-15

Applicant: Seagate Technology LLC

Inventor： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Kaizhong Gao ,  Olle Heinonen ,  Wenzhong Zhu

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.

Abstract translation: 自旋转矩存储器包括复合自由磁性元件，具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层 。 自由磁性元件包括与软磁性层交换的硬磁性层。 复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。

公开(公告)号：US08670271B2

公开(公告)日：2014-03-11

申请号：US13857410

申请日：2013-04-05

Applicant: Seagate Technology LLC

Inventor： Yuankai Zheng ,  Zheng Gao ,  Wonjoon Jung ,  Xuebing Feng ,  Xiaohua Lou ,  Haiwen Xi

IPC: G11C11/15

CPC classification number: H01L43/02 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/08

Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

Abstract translation: 具有铁磁自由层和铁磁性固定参考层的磁性隧道结，每个具有面外磁各向异性和面外磁化取向，所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层，辅助层具有小于700Oe的低磁各向异性，并定位成在自由层上施加磁场。

公开(公告)号：US20130200476A1

公开(公告)日：2013-08-08

申请号：US13829137

申请日：2013-03-14

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yuankai Zheng ,  Xiaohua Lou ,  Wei Tian ,  Zheng Gao ,  Haiwen Xi

IPC: H01L43/02

CPC classification number: H01L43/02 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.

Abstract translation: 一种具有声阻隔绝缘层的非易失性存储单元的装置和相关方法。 根据各种实施例，磁性堆叠具有隧道结，铁磁自由层，被钉扎层和由电绝缘材料和热绝缘材料构成的绝缘层，其阻挡声子同时允许通过至少一个导电特征的电传输。

公开(公告)号：US08711608B2

公开(公告)日：2014-04-29

申请号：US13785525

申请日：2013-03-05

Applicant: Seagate Technology LLC

Inventor： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

IPC: G11C11/00

CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer. A write current passes through the giant magnetoresistance cell to switch the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

Abstract translation: 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁电阻单元包括自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括自由磁性层。 写入电流通过巨磁电阻单元，以将巨磁阻单元切换到高电阻状态和低电阻状态之间。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

公开(公告)号：US20130181306A1

公开(公告)日：2013-07-18

申请号：US13784230

申请日：2013-03-04

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

Abstract translation: 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

公开(公告)号：US08780619B2

公开(公告)日：2014-07-15

申请号：US13934998

申请日：2013-07-03

Applicant: Seagate Technology LLC

Inventor： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

IPC: G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

Abstract: An apparatus and method for storing data in a semiconductor memory. In accordance with some embodiments, the semiconductor memory has a continuous storage layer of soft ferromagnetic material having opposing top and bottom surfaces with overall length and width dimensions and an overall thickness dimension between the opposing top and bottom surfaces. A plurality of spaced apart, discrete reference layers are adjacent a selected one of the opposing top or bottom surfaces of the continuous storage layer with each having a fixed magnetic orientation. A plurality of spaced apart, discrete barrier layers are disposed in contacting relation between the discrete reference layers and the continuous storage layer.

Abstract translation: 一种用于在半导体存储器中存储数据的装置和方法。 根据一些实施例，半导体存储器具有软铁磁材料的连续存储层，其具有相对的顶部和底部表面，其整体长度和宽度尺寸以及相对的顶部和底部表面之间的整体厚度尺寸。 多个间隔开的离散参考层与连续存储层的相对的顶表面或底表面中的所选择的一个相邻，每个具有固定的磁取向。 多个间隔开的离散阻挡层以离散参考层和连续存储层之间的接触关系设置。

公开(公告)号：US20140022837A1

公开(公告)日：2014-01-23

申请号：US13947810

申请日：2013-07-22

Applicant: Seagate Technology LLC

Inventor： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G01R33/098 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1697

Abstract: Devices and methods for generating a random number that utilizes a magnetic tunnel junction are disclosed. An AC current source can be in electrical connection to a magnetic tunnel junction to provide an AC current to the magnetic tunnel junction. A read circuit can be used to determine a bit based on a state of the magnetic tunnel junction. A rate of production of the bits can be adjusted, such as by adjusting a frequency or amplitude of the AC current. A probability of obtaining a “0” or “1” bit can be managed, such as by an addition of DC biasing to the AC current.

Abstract translation: 公开了用于产生利用磁性隧道结的随机数的装置和方法。 AC电流源可以与磁性隧道结电连接，以向磁性隧道结提供AC电流。 读取电路可以用于基于磁性隧道结的状态来确定位。 可以通过调整AC电流的频率或振幅来调整位的产生速率。 可以例如通过向AC电流添加DC偏置来管理获得“0”或“1”位的概率。

公开(公告)号：US20140003138A1

公开(公告)日：2014-01-02

申请号：US14017392

申请日：2013-09-04

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Xiaohua Lou ,  Haiwen Xi

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  Y10S977/933 ,  Y10S977/935

Abstract: A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

Abstract translation: 存储单元包括电耦合到位线和字线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使单极电压跨过磁隧道结数据单元而在高电阻状态和低电阻状态之间切换。 二极管电耦合在磁性隧道结数据单元和字线或位线之间。 电压源提供写入高电阻状态和低电阻状态的磁性隧道结数据单元两端的单极电压。