发明授权
US08691656B2 Methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM
有权
在DRAM中形成衬底位线接触和位线之间的互连的方法
- 专利标题： Methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM
- 专利标题（中）： 在DRAM中形成衬底位线接触和位线之间的互连的方法
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申请号： US13226787申请日： 2011-09-07
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公开(公告)号： US08691656B2公开(公告)日： 2014-04-08
- 发明人: Brett W. Busch , David K. Hwang , F. Daniel Gealy
- 申请人： Brett W. Busch , David K. Hwang , F. Daniel Gealy
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, PS
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
The invention includes methods of electrically interconnecting different elevation conductive structures, methods of forming capacitors, methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM, and methods of forming DRAM memory cells. In one implementation, a method of electrically interconnecting different elevation conductive structures includes forming a first conductive structure comprising a first electrically conductive surface at a first elevation of a substrate. A nanowhisker is grown from the first electrically conductive surface, and is provided to be electrically conductive. Electrically insulative material is provided about the nanowhisker. An electrically conductive material is deposited over the electrically insulative material in electrical contact with the nanowhisker at a second elevation which is elevationally outward of the first elevation, and the electrically conductive material is provided into a second conductive structure. Other aspects and implementations are contemplated.
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