Semiconductor chips and methods of forming the same

Invention Grant

US08691692B2 Semiconductor chips and methods of forming the same 有权

Title translation: 半导体芯片及其形成方法

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Patent Title: Semiconductor chips and methods of forming the same
Patent Title (中): 半导体芯片及其形成方法
Application No.: US13966531

Application Date: 2013-08-14
Publication No.: US08691692B2

Publication Date: 2014-04-08
Inventor: Dong-Chan Lim , Gilheyun Choi , Kwangjin Moon , Deok-Young Jung , Byung-Lyul Park , Dosun Lee
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR Suwon-Si, Gyeonggi-Do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
Agency: F. Chau & Associates, LLC
Priority: KR10-2010-0114022 20101116
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/44

Semiconductor chips and methods of forming the same

Abstract:

Provided are a semiconductor chip and a method of manufacturing the same. The semiconductor chip includes a substrate having a first side and a second side facing each other, and a through electrode being disposed in a hole penetrating the substrate, wherein an opening surrounded by the through electrode is disposed in the hole, wherein the opening comprises a first end adjacent to the first side of the substrate and a second end adjacent to the second side of the substrate.

Abstract(Chinese):

提供一种半导体芯片及其制造方法。半导体芯片包括具有彼此相对的第一侧和第二侧的基板，以及设置在穿透基板的孔中的贯通电极，其中，由贯通电极包围的开口设置在孔中，其中，开口包括与基板的第一侧相邻的第一端和与基板的第二侧相邻的第二端。

Public/Granted literature

US20130344695A1 SEMICONDUCTOR CHIPS AND METHODS OF FORMING THE SAME Public/Granted day:2013-12-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）