Invention Grant
- Patent Title: Resistance variable memory device including nano particles and method for fabricating the same
- Patent Title (中): 包括纳米颗粒的电阻可变存储器件及其制造方法
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Application No.: US13596807Application Date: 2012-08-28
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Publication No.: US08692223B2Publication Date: 2014-04-08
- Inventor: Ji-Won Moon , Moon-Sig Joo , Sung-Hoon Lee , Jung-Nam Kim
- Applicant: Ji-Won Moon , Moon-Sig Joo , Sung-Hoon Lee , Jung-Nam Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0146243 20111229
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A resistance variable memory device includes: a first electrode; a second electrode; a resistance variable layer interposed between the first electrode and the second electrode; and nano particles that are disposed in the resistance variable layer and have a lower dielectric constant than the resistance variable layer.
Public/Granted literature
- US20130168632A1 RESISTANCE VARIABLE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-07-04
Information query
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