发明授权
- 专利标题： FinFET structure
- 专利标题（中）： FinFET结构
-
申请号： US13347707申请日： 2012-01-11
-
公开(公告)号： US08698199B2公开(公告)日： 2014-04-15
- 发明人: Tong-Yu Chen , Chih-Jung Wang
- 申请人： Tong-Yu Chen , Chih-Jung Wang
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A finFET device includes a substrate, at least a first fin structure disposed on the substrate, a L-shaped insulator surrounding the first fin structure and exposing, at least partially, the sidewalls of the first fin structure, wherein the height of the L-shaped insulator is inferior to the height of the first fin structure in order to expose parts of the sidewalls surface of the first fin structure, and a gate structure disposed partially on the L-shaped insulator and partially on the first fin structure.
公开/授权文献
- US20130175621A1 FINFET STRUCTURE AND METHOD FOR MAKING THE SAME 公开/授权日：2013-07-11
信息查询
IPC分类:
