Invention Grant
US08698221B2 Capacitor that includes dielectric layer structure having plural metal oxides doped with different impurities
有权
包括具有掺杂有不同杂质的多种金属氧化物的电介质层结构的电容器
- Patent Title: Capacitor that includes dielectric layer structure having plural metal oxides doped with different impurities
- Patent Title (中): 包括具有掺杂有不同杂质的多种金属氧化物的电介质层结构的电容器
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Application No.: US13290397Application Date: 2011-11-07
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Publication No.: US08698221B2Publication Date: 2014-04-15
- Inventor: Kiyeon Park , Insang Jeon , Hanjin Lim , Yeongcheol Lee , Jun-Noh Lee
- Applicant: Kiyeon Park , Insang Jeon , Hanjin Lim , Yeongcheol Lee , Jun-Noh Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0117062 20101123
- Main IPC: H01L29/92
- IPC: H01L29/92
Abstract:
A capacitor includes a first electrode, a first dielectric layer disposed on the first electrode, the first dielectric layer having a tetragonal crystal structure and including a first metal oxide layer doped with a first impurity, a second dielectric layer disposed on the first metal oxide layer, the second dielectric layer having a tetragonal crystal structure and including a second metal oxide layer doped with a second impurity, and a second electrode disposed on the second dielectric layer. The first dielectric layer has a lower crystallization temperature and a substantially higher dielectric constant than the second dielectric layer.
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