发明授权
- 专利标题: Photonic crystal surface emitting laser and method of manufacturing the same
- 专利标题(中): 光子晶体发射激光器及其制造方法
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申请号: US13482025申请日: 2012-05-29
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公开(公告)号: US08699539B2公开(公告)日: 2014-04-15
- 发明人: Aihiko Numata
- 申请人: Aihiko Numata
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2011-137481 20110621
- 主分类号: H01S5/183
- IPC分类号: H01S5/183
摘要:
A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.