公开(公告)号：US08625649B2

公开(公告)日：2014-01-07

申请号：US13413910

申请日：2012-03-07

申请人： Mitsuhiro Ikuta ,  Aihiko Numata

发明人： Mitsuhiro Ikuta ,  Aihiko Numata

IPC分类号： H01S5/00 ,  H01S3/20

CPC分类号： H01S5/18391 ,  G03G15/0435 ,  G03G2215/0404 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/18369 ,  H01S5/18375 ,  H01S5/18394

摘要： A surface emitting laser includes a stepped structure having a step between a first region and a second region, the stepped structure provided in an emission area located in an upper portion of the upper mirror. The surface emitting laser includes a light shielding member provided in a third region between the first region and the second region. The light shielding member is not provided in a portion of the first region and a portion of the second region.

摘要翻译： 表面发射激光器包括在第一区域和第二区域之间具有台阶的台阶结构，该台阶结构设置在位于上反射镜上部的发射区域中。 表面发射激光器包括设置在第一区域和第二区域之间的第三区域中的遮光构件。 遮光构件不设置在第一区域的一部分和第二区域的一部分中。

公开(公告)号：US08580031B2

公开(公告)日：2013-11-12

申请号：US12754833

申请日：2010-04-06

申请人： Aihiko Numata ,  Hikaru Hoshi ,  Kenji Tamamori

发明人： Aihiko Numata ,  Hikaru Hoshi ,  Kenji Tamamori

IPC分类号： C30B29/10

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B6/13 ,  H01S5/105

摘要： A method of producing a three-dimensional photonic crystal by laminating a layer having a periodic structure, the method including the steps of forming a first structure and a second structure each including the layer having the periodic structure; and bonding a first bonding layer of the first structure and a second bonding layer of the second structure. The first bonding layer is one layer obtained by dividing a layer constituting the three-dimensional photonic crystal at a cross section perpendicular to a lamination direction, and the second bonding layer is the other layer obtained by dividing the layer constituting the three-dimensional photonic crystal at the cross section perpendicular to the lamination direction.

摘要翻译： 一种通过层叠具有周期性结构的层来制造三维光子晶体的方法，所述方法包括以下步骤：形成具有周期性结构的层的第一结构和第二结构; 以及将所述第一结构的第一接合层和所述第二结构的第二接合层接合。 第一接合层是通过在垂直于层叠方向的截面上划分构成三维光子晶体的层而获得的一层，并且第二接合层是通过将构成三维光子晶体的层分割而获得的另一层 在垂直于层叠方向的横截面处。

公开(公告)号：US20090201960A1

公开(公告)日：2009-08-13

申请号：US12366888

申请日：2009-02-06

申请人： Aihiko Numata ,  Kazuya Nobayashi

发明人： Aihiko Numata ,  Kazuya Nobayashi

IPC分类号： H01S5/00 ,  H01L33/00

CPC分类号： H01S5/10 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  H01L33/02 ,  H01L33/06 ,  H01L2933/0083 ,  H01S5/105 ,  H01S5/2004 ,  H01S5/2027 ,  H01S5/3211 ,  H01S5/32341

摘要： The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type semiconductor, a tunnel junction layer, and a first N-conductive layer formed of a first N-type conductor are arranged in this order. Electric conductivity of the first N-type conductor is higher than that of the P-type semiconductor. The light emitting device achieves high carrier injection efficiency and a high optical confinement effect.

摘要翻译： 三维光子晶体发光器件包括三维光子晶体和在三维光子晶体中形成谐振器的缺陷。 在三维光子晶体中，由N型半导体形成的N包覆层，设置在谐振器内部的有源层，由P型半导体形成的P包覆层，隧道结层和第一 由第一N型导体形成的N导电层按此顺序排列。 第一N型导体的导电率高于P型半导体。 发光器件实现高载流子注入效率和高的光限制效应。

公开(公告)号：US08699539B2

公开(公告)日：2014-04-15

申请号：US13482025

申请日：2012-05-29

申请人： Aihiko Numata

发明人： Aihiko Numata

IPC分类号： H01S5/183

CPC分类号： H01S5/105 ,  B82Y20/00 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

摘要： A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.

摘要翻译： 一种光子晶体表面发射激光器，具有形成在衬底上的n型覆层; 形成在n型包层上的有源层; 形成在有源层上并由第二p型半导体制成的电子阻挡层; 并且形成在电子阻挡层上的二维光子晶体层包括由第一p型半导体制成并具有不同带隙的多个层，并且具有高折射率部分和低折射率部分 在平面方向。 多个层的带隙小于第二p型半导体的带隙，并且在多层的层叠方向上逐步或连续地减少。 具有比第二p型半导体的受体掺杂浓度小的第三p型半导体被设置为覆盖电子阻挡层的表面。

公开(公告)号：US08525282B2

公开(公告)日：2013-09-03

申请号：US12893016

申请日：2010-09-29

申请人： Aihiko Numata ,  Akinari Takagi

发明人： Aihiko Numata ,  Akinari Takagi

IPC分类号： H01L31/0232

CPC分类号： H01L27/14625 ,  H01L27/14685

摘要： A solid-state imaging device capable of making reduction in reflection at the interface between a light guide and an incident unit consistent with improvement in condensing efficiency by the light guide is provided. The solid-state imaging device includes a substrate internally including a photoelectric conversion unit, and a condensing unit provided on an optical incident side of the substrate. A configuration satisfying relationships of |N1|

摘要翻译： 提供了能够通过光导通过提高冷凝效率来缩小导光体与入射部之间的界面的反射的固体摄像装置。 固态成像装置包括内部包括光电转换单元的基板和设置在基板的光入射侧的聚光单元。 满足| N1 | <|√E×√mu|的关系的配置 采用聚光单元的光入射侧的端面上的0.63

公开(公告)号：US20120327966A1

公开(公告)日：2012-12-27

申请号：US13482025

申请日：2012-05-29

申请人： Aihiko Numata

发明人： Aihiko Numata

IPC分类号： H01S5/00 ,  H01L21/00

CPC分类号： H01S5/105 ,  B82Y20/00 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

摘要： A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.

摘要翻译： 一种光子晶体表面发射激光器，具有形成在衬底上的n型覆层; 形成在n型包层上的有源层; 形成在有源层上并由第二p型半导体制成的电子阻挡层; 并且形成在电子阻挡层上的二维光子晶体层包括由第一p型半导体制成并具有不同带隙的多个层，并且具有高折射率部分和低折射率部分 在平面方向。 多个层的带隙小于第二p型半导体的带隙，并且在多层的层叠方向上逐步或连续地减少。 具有比第二p型半导体的受体掺杂浓度小的第三p型半导体被设置为覆盖电子阻挡层的表面。

公开(公告)号：US20070110382A1

公开(公告)日：2007-05-17

申请号：US11558563

申请日：2006-11-10

申请人： Kiyokatsu Ikemoto ,  Akinari Takagi ,  Hikaru Hoshi ,  Kazuya Nobayashi ,  Aihiko Numata

发明人： Kiyokatsu Ikemoto ,  Akinari Takagi ,  Hikaru Hoshi ,  Kazuya Nobayashi ,  Aihiko Numata

IPC分类号： G02B6/10

CPC分类号： G02B6/1225 ,  B82Y20/00

摘要： At least one exemplary embodiment is directed to a waveguide, which includes a three-dimensional photonic crystal including a first linear defect and a second linear defect. The first linear defect is disposed at part of columnar structures and is formed of a medium different from the columnar structures. The second linear defect is disposed at part of columnar structures extending in the longitudinal direction of the first linear defect and is formed of a medium having a refractive index different from that of the medium used for the columnar structures. The second linear defect is separated from the first linear defect by a distance of at least 0.5 times the out-of-plane lattice period of the three-dimensional photonic crystal in a direction in which layers including the columnar structures are stacked.

摘要翻译： 至少一个示例性实施例涉及一种波导，其包括包括第一线性缺陷和第二线性缺陷的三维光子晶体。 第一线性缺陷设置在柱状结构的一部分，并且由不同于柱状结构的介质形成。 第二线性缺陷设置在沿着第一线性缺陷的纵向方向延伸的柱状结构的一部分处，并且由具有与用于柱状结构的介质的折射率不同的介质形成。 将第二线性缺陷与包含柱状结构的层的层叠方向上的三维光子晶体的面外晶格周期的至少0.5倍的距离与第一线性缺陷分开。

公开(公告)号：US09040888B2

公开(公告)日：2015-05-26

申请号：US13297901

申请日：2011-11-16

申请人： Aihiko Numata

发明人： Aihiko Numata

IPC分类号： H01L27/146

CPC分类号： H01L27/14621

摘要： A solid state image sensor includes a plurality of pixels, each having a photoelectric conversion section formed in the inside of a substrate and a light-receiving section formed on the side of a light-receiving surface of the substrate. At least a part of the plurality of pixels is ranging pixels. The light-receiving section of each of the ranging pixels is equipped with a guided mode resonant filter adapted to reflect incident light getting into the inside of the light-receiving section at a specific incident angle. The normal line of the guided mode resonant filter is inclined relative to the principal ray of the flux of light entering the guided mode resonant filter.

摘要翻译： 固态图像传感器包括多个像素，每个像素具有形成在基板内部的光电转换部分和形成在基板的光接收表面侧的光接收部分。 多个像素中的至少一部分是测距像素。 每个测距像素的光接收部分配备有引导模式谐振滤波器，其适于反射以特定入射角进入光接收部分内部的入射光。 导模谐振滤波器的法线相对于进入导模谐振滤波器的光通量的主光线倾斜。

公开(公告)号：US20120237261A1

公开(公告)日：2012-09-20

申请号：US13413910

申请日：2012-03-07

申请人： Mitsuhiro Ikuta ,  Aihiko Numata

发明人： Mitsuhiro Ikuta ,  Aihiko Numata

IPC分类号： G03G15/04 ,  H01S3/06

CPC分类号： H01S5/18391 ,  G03G15/0435 ,  G03G2215/0404 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/18369 ,  H01S5/18375 ,  H01S5/18394

摘要： A surface emitting laser includes a stepped structure having a step between a first region and a second region, the stepped structure provided in an emission area located in an upper portion of the upper mirror. The surface emitting laser includes a light shielding member provided in a third region between the first region and the second region. The light shielding member is not provided in a portion of the first region and a portion of the second region.

摘要翻译： 表面发射激光器包括在第一区域和第二区域之间具有台阶的台阶结构，该台阶结构设置在位于上反射镜上部的发射区域中。 表面发射激光器包括设置在第一区域和第二区域之间的第三区域中的遮光构件。 遮光构件不设置在第一区域的一部分和第二区域的一部分中。

公开(公告)号：US20110079867A1

公开(公告)日：2011-04-07

申请号：US12893016

申请日：2010-09-29

申请人： Aihiko Numata ,  Akinari Takagi

发明人： Aihiko Numata ,  Akinari Takagi

IPC分类号： H01L31/0232

CPC分类号： H01L27/14625 ,  H01L27/14685

摘要： A solid-state imaging device capable of making reduction in reflection at the interface between a light guide and an incident unit consistent with improvement in condensing efficiency by the light guide is provided. The solid-state imaging device includes a substrate internally including a photoelectric conversion unit, and a condensing unit provided on an optical incident side of the substrate. A configuration satisfying relationships of |N1|

摘要翻译： 提供了能够通过光导通过提高冷凝效率来缩小导光体与入射部之间的界面的反射的固体摄像装置。 固态成像装置包括内部包括光电转换单元的基板和设置在基板的光入射侧的聚光单元。 满足| N1 | <|√∈×√μ|的关系的配置 采用聚光单元的光入射侧端面上的0.63