发明授权
- 专利标题： Pattern-forming method
- 专利标题（中）： 图案形成方法
-
申请号： US13283582申请日： 2011-10-28
-
公开(公告)号： US08703395B2公开(公告)日： 2014-04-22
- 发明人: Hayato Namai , Hiroki Nakagawa , Kentaro Harada , Takehiko Naruoka
- 申请人： Hayato Namai , Hiroki Nakagawa , Kentaro Harada , Takehiko Naruoka
- 申请人地址： JP Tokyo
- 专利权人： JSR Corporation
- 当前专利权人： JSR Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Ditthavong Mori & Steiner, P.C.
- 主分类号： G03F7/26
- IPC分类号： G03F7/26
摘要：
A pattern-forming method includes applying a photoresist composition to a substrate to form a resist film. The photoresist composition includes an acid generator and a first polymer that includes an acid-dissociable group. The resist film is exposed. The resist film is developed using a developer having an organic solvent content of 80 mass % or more to form a prepattern of the resist film. A polymer film having a phase separation structure in a space defined by the prepattern is formed using a composition that includes a plurality of second polymers. A part of the phase separation structure of the polymer film is removed.
公开/授权文献
- US20130107235A1 PATTERN-FORMING METHOD 公开/授权日：2013-05-02
信息查询
IPC分类:
