发明授权
- 专利标题： MOS capacitors with a finFET process
- 专利标题（中）： 具有finFET工艺的MOS电容器
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申请号： US13471955申请日： 2012-05-15
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公开(公告)号： US08703553B2公开(公告)日： 2014-04-22
- 发明人: Kangguo Cheng , Balasubramanian S. Haran , Shom Ponoth , Theodorus E. Standaert , Tenko Yamashita
- 申请人： Kangguo Cheng , Balasubramanian S. Haran , Shom Ponoth , Theodorus E. Standaert , Tenko Yamashita
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/12
摘要：
Methods for capacitor fabrication include doping a capacitor region of a semiconductor layer in a semiconductor-on-insulator substrate; partially etching the semiconductor layer to produce a first terminal layer comprising doped semiconductor fins on a remaining base of doped semiconductor; forming a dielectric layer over the first terminal layer; and forming a second terminal layer over the dielectric layer in a finFET process.
公开/授权文献
- US20130309832A1 MOS CAPACITORS WITH A FINFET PROCESS 公开/授权日：2013-11-21
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