发明授权
US08704290B2 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element
有权
非易失性半导体存储元件，非易失性半导体存储器以及用于操作非易失性半导体存储元件的方法
- 专利标题： Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element
- 专利标题（中）： 非易失性半导体存储元件，非易失性半导体存储器以及用于操作非易失性半导体存储元件的方法
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申请号： US13619223申请日： 2012-09-14
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公开(公告)号： US08704290B2公开(公告)日： 2014-04-22
- 发明人: Masao Shingu , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
- 申请人： Masao Shingu , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-206291 20080808
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.