Invention Grant
- Patent Title: Avalanche photo diode and method of manufacturing the same
- Patent Title (中): 雪崩光电二极管及其制造方法
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Application No.: US13605135Application Date: 2012-09-06
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Publication No.: US08710547B2Publication Date: 2014-04-29
- Inventor: Jae-Sik Sim , Kisoo Kim , Bongki Mheen , MyoungSook Oh , Yong-Hwan Kwon , Eun Soo Nam
- Applicant: Jae-Sik Sim , Kisoo Kim , Bongki Mheen , MyoungSook Oh , Yong-Hwan Kwon , Eun Soo Nam
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2011-0136694 20111216
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.
Public/Granted literature
- US20130153962A1 AVALANCHE PHOTO DIODE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-06-20
Information query
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